Product Specification www.jmnic.com 2SC1079 2SC1080 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SA679/680 ・High power dissipation APPLICATIONS ・For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2SC1079 VCBO Collector-base voltage 120 Open base 2SC1080 VEBO Emitter-base voltage V 100 2SC1079 Collector-emitter voltage UNIT 120 Open emitter 2SC1080 VCEO VALUE V 100 Open collector 5 V IC Collector current 12 A IE Emitter current -12 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Product Specification www.jmnic.com 2SC1079 2SC1080 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC1079 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT 120 IC=0.1A ;IB=0 2SC1080 V(BR)EBO MIN V 100 Emitter-base breakdown voltage IE=10mA ;IC=0 Collector-emitter saturation voltage IC=10A; IB=1A 3.0 V VBE Base-emitter on voltage IC=10A ; VCE=5V 2.5 V ICBO Collector cut-off current VCB=50V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=2A ; VCE=5V 40 hFE-2 DC current gain IC=7A ; VCE=5V 15 Transition frequency IC=2A ; VCE=5V VCEsat fT hFE-1 Classifications R Y 40-80 70-140 2 5 V 140 4 MHz Product Specification www.jmnic.com 2SC1079 2SC1080 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3