JMnic Product Specification 2SA1051 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High transition frequency ・Excellent safe operating area APPLICATIONS ・For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -1.5 A PC Collector power dissipation 150 W Tj Junction temperature 175 ℃ Tstg Storage temperature -55~200 ℃ TC=25℃ JMnic Product Specification 2SA1051 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -150 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V VBE Base-emitter on voltage IC=-8A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-140V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 hFE-2 DC current gain IC=-8A ; VCE=-5V 35 Transition frequency IC=-1A ; VCE=-10V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 160 60 MHz JMnic Product Specification 2SA1051 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3