JMNIC 2SC2336A

JMnic
Product Specification
Silicon NPN Power Transistors
2SC2336 2SC2336A 2SC2336B
DESCRIPTION
・With TO-220 package
・Complement to type 2SA1006,
2SA1006A,2SA1006B
APPLICATIONS
・Audio frequency power amplifier
・High frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SC2336
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2SC2336A
Open emitter
Emitter-base voltage
200
2SC2336B
250
2SC2336
180
2SC2336A
UNIT
180
Open base
2SC2336B
VEBO
VALUE
200
V
V
250
Open collector
5
V
IC
Collector current
1.5
A
ICM
Collector current-peak
3.0
A
PT
Total power dissipation
Ta=25℃
1.5
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2336 2SC2336A 2SC2336B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
‹
CONDITIONS
MAX
UNIT
IC=0.5A; IB=50mA
1.0
V
Base-emitter saturation voltage
IC=0.5A ;IB=50mA
1.5
V
ICBO
Collector cut-off current
VCB=150V; IE=0
1
μA
IEBO
Emitter cut-off current
VEB=3V; IC=0
1
μA
hFE-1
DC current gain
IC=5mA ; VCE=5V
30
hFE-2
DC current gain
IC=150mA ; VCE=5V
60
Cob
Output capacitance
IE=0 ; VCB=10V,f=1MHz
30
pF
fT
Transition frequency
IC=100mA ; VCE=10V
95
MHz
hFE-2 Classifications
R
Q
P
60-120
100-200
160-320
2
MIN
TYP.
320
JMnic
Product Specification
2SC2336 2SC2336A 2SC2336B
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
JMnic
Silicon NPN Power Transistors
Product Specification
2SC2336 2SC2336A 2SC2336B
4
JMnic
Product Specification
2SC2336 2SC2336A 2SC2336B
Silicon NPN Power Transistors
5