JMnic Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION ・With TO-220 package ・Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SC2336 VCBO VCEO Collector-base voltage Collector-emitter voltage 2SC2336A Open emitter Emitter-base voltage 200 2SC2336B 250 2SC2336 180 2SC2336A UNIT 180 Open base 2SC2336B VEBO VALUE 200 V V 250 Open collector 5 V IC Collector current 1.5 A ICM Collector current-peak 3.0 A PT Total power dissipation Ta=25℃ 1.5 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat CONDITIONS MAX UNIT IC=0.5A; IB=50mA 1.0 V Base-emitter saturation voltage IC=0.5A ;IB=50mA 1.5 V ICBO Collector cut-off current VCB=150V; IE=0 1 μA IEBO Emitter cut-off current VEB=3V; IC=0 1 μA hFE-1 DC current gain IC=5mA ; VCE=5V 30 hFE-2 DC current gain IC=150mA ; VCE=5V 60 Cob Output capacitance IE=0 ; VCB=10V,f=1MHz 30 pF fT Transition frequency IC=100mA ; VCE=10V 95 MHz hFE-2 Classifications R Q P 60-120 100-200 160-320 2 MIN TYP. 320 JMnic Product Specification 2SC2336 2SC2336A 2SC2336B Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 JMnic Silicon NPN Power Transistors Product Specification 2SC2336 2SC2336A 2SC2336B 4 JMnic Product Specification 2SC2336 2SC2336A 2SC2336B Silicon NPN Power Transistors 5