JMnic Product Specification 2SA1383 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC3514 ・High transition frequency APPLICATIONS ・Designed for use in audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V -0.1 A IC Collector current PC Collector power dissipation Ta=25℃ 1.5 W TC=25℃ 10 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA1383 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=-50mA; IB=-5mA -0.5 V VBEsat Base-emitter saturation voltage IC=-50mA; IB=-5mA -1.5 V ICBO Collector cut-off current VCB=-180V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 μA hFE-1 DC current gain IC=-1mA ; VCE=-5V 90 hFE-2 DC current gain IC=-10mA ; VCE=-5V 100 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 4.5 pF fT Transition frequency IC=-20mA ; VCE=-10V 180 MHz CONDITIONS hFE-2 Classifications Q P 100-200 160-320 2 MIN TYP. MAX -180 UNIT V 320 JMnic Product Specification 2SA1383 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3