JMnic Product Specification 2SC3725 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 15 A IB Base current 5 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 1.56 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case JMnic Product Specification 2SC3725 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 450 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 0.8 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.2 V ICBO Collector cut-off current VCB=450V; IE=0 100 μA IEBO Emitter cut-off current VEB=10V; IC=0 100 μA hFE DC current gain IC=6A ; VCE=5V 1.0 μs 2.5 μs 0.5 μs 10 Switching times ton Turn-on time ts Storage time tf Fall time IC=6A; IB1=2A IB2=-4A; RL=15Ω 2 JMnic Product Specification 2SC3725 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3