Product Specification www.jmnic.com 2SC3866 Silicon Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High speed switching ・High voltage ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 3 A IB Base current 1 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 3.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case JMnic Product Specification www.jmnic.com 2SC3866 Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter breakdown voltage IC=10mA , IB=0 800 V VCBO Collector-base breakdown voltage IC=1mA , IE=0 900 V VEBO Emitter-base breakdown voltage IE=1mA , IC=0 10 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V VBEsat Emitter-base saturation voltage IC=1A; IB=0.2A 1.5 V ICBO Collector cut-off current VCB=900V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=10V; IC=0 1.0 mA hFE DC current gain IC=1A ; VCE=5V 1.0 μs 4.0 μs 0.8 μs 10 Switching times ton Turn-on time ts Storage time tf Fall time IC=2A; IB1=0.4A IB2=-0.8A;RL=150Ω Pw=20μs,Duty≤2% JMnic Product Specification www.jmnic.com 2SC3866 Silicon Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic