Inchange Semiconductor Product Specification 2SC3723 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 半 固电 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC CONDITIONS A H C IN R O T UC VALUE UNIT Collector-base voltage Open emitter 450 V Collector-emitter voltage Open base 400 V Emitter-base voltage Open collector 10 V IC Collector current 5 A IB Base current 2 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 3.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification 2SC3723 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 450 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.2 V ICBO Collector cut-off current VCB=450V ;IE=0 100 μA IEBO Emitter cut-off current VEB=10V; IC=0 100 μA hFE DC current gain 1.0 μs 2.5 μs 0.5 μs 体 导 半 固电 Switching times ton ts IN tf Fall time Storage time IC=4A; IB1=0.8A IB2=-1.6A;RL=37.5Ω 2 MIN TYP. MAX R O T UC D N O IC IC=2 A ; VCE=5V EM S E NG CHA Turn-on time CONDITIONS UNIT 10 Inchange Semiconductor Product Specification 2SC3723 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC3723 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC