ISC 2SC3723

Inchange Semiconductor
Product Specification
2SC3723
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・High voltage ,high speed switching
・High reliability
APPLICATIONS
・Switching regulators
・Ultrasonic generators
・High frequency inverters
・General purpose power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
体
导
半
固电
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
EM
S
E
NG
PARAMETER
D
N
O
IC
CONDITIONS
A
H
C
IN
R
O
T
UC
VALUE
UNIT
Collector-base voltage
Open emitter
450
V
Collector-emitter voltage
Open base
400
V
Emitter-base voltage
Open collector
10
V
IC
Collector current
5
A
IB
Base current
2
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
3.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction case
Inchange Semiconductor
Product Specification
2SC3723
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
450
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
10
V
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.4A
0.8
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.4A
1.2
V
ICBO
Collector cut-off current
VCB=450V ;IE=0
100
μA
IEBO
Emitter cut-off current
VEB=10V; IC=0
100
μA
hFE
DC current gain
1.0
μs
2.5
μs
0.5
μs
体
导
半
固电
Switching times
ton
ts
IN
tf
Fall time
Storage time
IC=4A; IB1=0.8A
IB2=-1.6A;RL=37.5Ω
2
MIN
TYP.
MAX
R
O
T
UC
D
N
O
IC
IC=2 A ; VCE=5V
EM
S
E
NG
CHA
Turn-on time
CONDITIONS
UNIT
10
Inchange Semiconductor
Product Specification
2SC3723
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SC3723
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC