JMNIC 2SC4688

Product Specification
www.jmnic.com
2SC4688
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3PFM package
・Complement to type 2SA1803
APPLICATIONS
・Power amplifier applications
・Recommend for 40W high fidelity audio
frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PFM) and symbol
Maximum absolute ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
6
A
ICM
Collector current-peak
12
A
IB
Base current
0.6
A
PC
Collectorl power dissipation
55
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SC4688
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage
IC=50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=5A;IB=0.5 A
2.0
V
VBE
Base-emitter voltage
IC=3A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=80V IE=0
5
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
55
hFE-2
DC current gain
IC=3A ; VCE=5V
35
fT
Transition frequency
IC=1A ; VCE=5V
30
MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
105
pF
hFE classifications
R
O
55-110
80-160
JMnic
MIN
TYP.
MAX
80
UNIT
V
160
Product Specification
www.jmnic.com
2SC4688
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
JMnic