JMNIC 2SB778

JMnic
Product Specification
2SB778
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3PML package
・Complement to type 2SD998
APPLICATIONS
・High power amplifier applications
・Recommended for 45~50W audio
frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-10
A
IB
Base current
-1.0
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB778
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.5
V
VBE
Base-emitter on voltage
IC=-5A;VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE
DC current gain
IC=-1A ; VCE=-5V
Transition frequency
IC=-1A ; VCE=-5V
10
MHz
Collector output capacitance
IE=0;f=1MHz;VCB=-10V
280
pF
fT
COB
‹
CONDITIONS
hFE Classifications
R
O
55-110
80-160
2
MIN
TYP.
MAX
-120
UNIT
V
55
160
JMnic
Product Specification
2SB778
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
JMnic
Product Specification
2SB778
Silicon PNP Power Transistors
4