Diodes SMD Type Schottky barrier diode 1PS79SB31 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Very Low forward voltage Guard ring protected + +0.1 0.6-0.1 - Ultra small plastic SMD package. +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit continuous reverse voltage VR 30 V continuous forward current IF 200 mA 300 mA 1000 mA repetitive peak forward current IFSM non-repetitive peak forwrad current IFSM tp 1s;ä 0.5 t = 8.3 ms half sinewave; JEDEC method storage temperature Tstg junction temperature Tj operating ambient temperature -65 +150 125 Tamb -65 +125 Electrical Characteristics Ta = 25 Parameter Symbol forward voltage VF Conditions Typ Max IF = 0.1 mA 130 190 IF = 1 mA 190 250 IF = 10 mA 255 300 IF = 100 mA 355 410 Unit mV IF = 200 mA 420 500 capacitance reverse current IR V R = 10 V, note 1; 2.5 30 A diods capacitance Cd V R = 1 V, f = 1 MHz; 20 25 pF Note 1. Pulse test: pulse tp = 300 s, ä= 0.02. Marking Marking G3 www.kexin.com.cn 1