Diodes SMD Type Schottky barrier diode 1PS59SB21 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage 0.55 Ultra fast switching speed 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Guard ring protoected +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Small SMD package. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit Continuous reverse voltage VR 40 V Continuous forward current IF 200 mA 1 A Non-repetitive peak forwrad current IFSM Storage temperature T stg Junction temperature Tj -65 +150 125 Electrical Characteristics Ta = 25 Parameter forward voltage reverse current Symbol Conditions IF = 10 mA 300 VF IF = 100 mA 420 IF = 200 mA 550 V R = 35 V 15 A 3 mA IR V R = 35 V, Tj = 100 diode capacitance Cd thermal resistance from junction to ambient Rth j-a Min ,note 1 f = 1 MHz; V R = 0 V 40 Max Unit mV 50 pF 500 K/W Note 1. Pulse test: tp = 300 s; ä = 0.02. Marking Marking 21 www.kexin.com.cn 1