Diodes SMD Type Schottky barrier Diodes 1PS76SB70 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Low forward volatge +0.1 2.6-0.1 Guard ring protected Very small plastic SMD package 0.475 1.0max 0.375 +0.05 0.1-0.02 Low diode capacitance. Absolute Maximum Ratings Ta = 25 PARAMATER SYMBOL CONDITIONS MIN MAX UNIT continuous reverse voltage VR 70 V continuous forward current IF 70 mA 70 mA 100 mA repetitive peak forward current IFRM non-repetitive peak forward current IFSM storage temperature Tstg junction temperature tp 1 s; ä 0.5 tp < 10 ms -65 +150 -65 +150 Tj operating ambient temperature 150 Tamb E lectrical C haracteristics T a = 25 PARAMATER continuous forward voltage SYMBOL VF continuous reverse current IR diode capacitance Cd therm al resistance from junction to am bient R thj-a C O N D IT IO N S MAX U N IT IF = 1 m A 410 mV I F = 10 m A 750 mV V I F = 40 m A 1 V R = 50 V ; note 1 100 V R = 70 V ; note 1 10 VR = 0 V; f = MHz 5 pF 450 K /W A A N ote: 1.P ulse test: tp = 300 s; ä = 0.02. Marking Marking S2 www.kexin.com.cn 1