Diodes SMD Type Silicon Schottky Barrier Diode HRW0302A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 high effifiency rectifying. 0.55 Low forward voltage drop and suitable for +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 MPAK package is suittable for high density +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 surface mounting and high speed assembly. 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter R epetitive peak reverse voltage A verage rectified current N on-repetitive peak forw ard surge current Junction tem perature S torage tem perature S ym bol V alue U nit V RRM 20 V IO 300 mA I F S M (N ote 1) 3 A Tj 125 T stg -55 to + 125 N ote 1. 10m sec sine w ave 1 pulse Electrical Characteristics Ta = 25 Sym bol Conditions Max Unit Forward voltage Param eter VF I F = 200 m A 0.40 V Reverse current IR V R = 20 V 100 A C V R = 0 V, f = 1MHz 100 pF R th( j-a ) Polyim ide board Capacitance Therm al resistance Min Typ 340 /W Marking Marking S11 www.kexin.com.cn 1