Diodes SMD Type Silicon Epitaxial Planar Diode 1SV324 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V=4.3(Typ.) Low Series Resistance:rs=0.4 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05 0.1-0.02 Useful for Small Size Tuner Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit V Reverse Voltage VR 10 Junction Temperature Tj 125 T stg -55 to +125 Storage Temperature Range Electrical Characteristics T a = 25 Param eter Sym bol Reverse Voltage VR Reverse Current Capacitance Conditions Min IR = 1 10 A Typ Max V IR V R = 10 V C 1V f = 1 MHz;V R = 1 V 44 49.5 C 4V f = 1 MHz;V R = 4 V 9.2 12 Capacitance Ratio C 1 /C 4V Series Resistance rs 3 4 V R = 4V, f = 470 MHz Unit nA pF 4.3 0.4 0.8 Note 1.Signal level when capacitance is m easured:Vsig = 500m Vrm s Marking Marking V8 www.kexin.com.cn 1