KEXIN 1SV324

Diodes
SMD Type
Silicon Epitaxial Planar Diode
1SV324
SOD-323
+0.05
0.85-0.05
+0.1
1.3-0.1
+0.05
0.3-0.05
+0.1
1.7-0.1
Unit: mm
Features
High Capacitance Ratio:C1V/C4V=4.3(Typ.)
Low Series Resistance:rs=0.4
+0.1
2.6-0.1
1.0max
(Typ.)
0.475
0.375
+0.05
0.1-0.02
Useful for Small Size Tuner
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Value
Unit
V
Reverse Voltage
VR
10
Junction Temperature
Tj
125
T stg
-55 to +125
Storage Temperature Range
Electrical Characteristics T a = 25
Param eter
Sym bol
Reverse Voltage
VR
Reverse Current
Capacitance
Conditions
Min
IR = 1
10
A
Typ
Max
V
IR
V R = 10 V
C 1V
f = 1 MHz;V R = 1 V
44
49.5
C 4V
f = 1 MHz;V R = 4 V
9.2
12
Capacitance Ratio
C 1 /C 4V
Series Resistance
rs
3
4
V R = 4V, f = 470 MHz
Unit
nA
pF
4.3
0.4
0.8
Note
1.Signal level when capacitance is m easured:Vsig = 500m Vrm s
Marking
Marking
V8
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