Diodes SMD Type Silicon Epitaxial Planar Diode 1SV302 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V=17.5(Typ.) Low Series Resistance:rs=1.05 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05 0.1-0.02 Useful for Small Size Tuner Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Peak Reverse Voltage Symbol Value Unit VR 30 V V RM Junction Temperature Storage Temperature Range 35(R L = 10K ) Tj 125 T stg -55 to +125 V Electrical C haracteristics T a = 25 P aram eter S ym bol Conditions M in 30 Reverse V oltage VR IR = 1 Reverse Current IR V R = 28 V Capacitance A Typ M ax Unit 10 nA V C 2V f = 1 M Hz;V R = 2 V 42 47 51 C 25V f = 1 M Hz;V R = 25 V 2.1 2.6 3.1 17 17.5 Capacitance Ratio C 2V /C 25V S eries Resistance rs V R = 5V , f = 470 M Hz 1.05 pF 1.25 Note : A vailable in m atched group for capacitance to 2.5% . C(M ax.)-C(M in.) 0.025 C(M in.) (V R =2~25V ) Marking Marking TT www.kexin.com.cn 1