KEXIN 1SV302

Diodes
SMD Type
Silicon Epitaxial Planar Diode
1SV302
SOD-323
+0.05
0.85-0.05
+0.1
1.3-0.1
+0.05
0.3-0.05
+0.1
1.7-0.1
Unit: mm
Features
High Capacitance Ratio:C2V/C25V=17.5(Typ.)
Low Series Resistance:rs=1.05
+0.1
2.6-0.1
1.0max
(Typ.)
0.475
0.375
+0.05
0.1-0.02
Useful for Small Size Tuner
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Peak Reverse Voltage
Symbol
Value
Unit
VR
30
V
V RM
Junction Temperature
Storage Temperature Range
35(R L = 10K
)
Tj
125
T stg
-55 to +125
V
Electrical C haracteristics T a = 25
P aram eter
S ym bol
Conditions
M in
30
Reverse V oltage
VR
IR = 1
Reverse Current
IR
V R = 28 V
Capacitance
A
Typ
M ax
Unit
10
nA
V
C 2V
f = 1 M Hz;V R = 2 V
42
47
51
C 25V
f = 1 M Hz;V R = 25 V
2.1
2.6
3.1
17
17.5
Capacitance Ratio
C 2V /C 25V
S eries Resistance
rs
V R = 5V , f = 470 M Hz
1.05
pF
1.25
Note :
A vailable in m atched group for capacitance to 2.5% .
C(M ax.)-C(M in.)
0.025
C(M in.)
(V R =2~25V )
Marking
Marking
TT
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