Diodes SMD Type Schottky Barrier Double Diode BAT74 Unit: mm Features Low forward voltage Guard ring protected Small SMD package. Absolute Maximum Ratings Ta = 25 Parameter continuous reverse voltage continuous forward current Symbol Test Condition Min 30 V 60 V single diode loaded 200 mA (1) double diode loaded repetitive peak forward current IFRM non-repetitive peak forward current IFSM total power dissipation Ptot storage temperature Tstg junction temperature Tj operating ambient temperature Tamb thermal resistance from junction to ambient Rth j-a Unit series connection VR IF Max 110 single diode loaded ( tp 1 s;ä 0.5) double diode loaded ( tp 1 s;ä 0.5) 300 tp < 10 ms Tamb = 25 -65 mA mA 200 mA 600 mA 230 mW +150 125 -65 +125 500 K/W Note 1.If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in reverse and the other in forward operation at the same moment, total device current is max. 200 mA. www.kexin.com.cn 1 Diodes SMD Type BAT74 Electrical Characteristics Ta = 25 Param eter Sym bol forward voltage VF reverse current IR reverse recovery tim e t rr Cd Notes 1. Tem perature coefficient of forward voltage -0.6% /K. 2. Pulsed test: tp = 300 Marking Marking 2 L41 www.kexin.com.cn s; ä = 0.02. Max I F = 0.1 m A 240 I F = 1 m A;note 1 320 I F = 10 m A 400 I F = 30 m A 500 I F = 100 m A 800 V R = 25 V;note 2 2 when switched from I F = 10 m A to,I R = 10 m A; R L = 100 diode capacitance Test Condition Unit mV A 5 ns 10 pF ; m easured at I R = 1 m A f = 1 MHz; V R = 1 V;