Transistors SMD Type Plunger Drive Applications 2SA1369 Features High Collector Current (ICM = -3A, IC = -1.5A) High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3439 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1.5 A Peak Collector Current ICM -3 A Collector Power Dissipation PC 500 mW Jumction temperature Tj +150 Tstg -55 to +150 Storage temperature Range Electrical Characteristics Ta = 25 Parameter Symbol Collector Cut-off Current Emitter Cut-off Current Testconditons ICBO VCB = -20V , IE = 0 IEBO VEB = -2V , IC = 0 Min Typ Max Unit -0.1 ìA -0.1 ìA Collector-Emitter Breakdown Voltage V(BR)CEO IC = -1mA , RBE = -20 V Collector-Base Breakdown Voltage V(BR)CBO IC = -10ìA , IE = 0 -30 V Emitter-Base Breakdown Voltage V(BR)EBO IE = -10ìA , IC = 0 -6 V DC Current Gain hFE VCE = -6V , IC = -500mA VCE(sat) IC = -1A , IB = -20mA Collector-Emitter Saturation Voltage Transition Frequency fT Collector Output Capacitance Cob 400 1200 -0.25 -0.5 V VCE = -10V , IE = 10mA 90 MHz VCB = -10V , IE = 0 , f = 1MHz 37 pF hFE Classification G Marking Rank hFE G 400 H 800 600 1200 www.kexin.com.cn 1 Transistors SMD Type 2SA1369 Electrical Characteristics Curves 2 www.kexin.com.cn Transistors SMD Type 2SA1369 www.kexin.com.cn 3