Transistors SMD Type Medium Power Transistor 2SD1664 Features Low VCE(sat) Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC PW =20ms, duty=1/2 PC * Collector Power Dissipation A A 0.5 W Tj 150 Tstg -55 to +150 Jumction temperature Storage temperature Range 1 2 * mounted on a 40x40x0.7mm ceramic board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current ICBO VCB = 20V , IE = 0 0.5 ìA Emitter Cut-off Current IEBO VEB = 4V , IC = 0 0.5 ìA Collector-base Breakdown Voltage V(BR)CBO IC = 50uA , IE = 0 40 V Collector-emitter Breakdown Voltage V(BR)CEO IC = 1mA , IB = 0 32 V Emitter-Base Breakdown Voltage V(BR)EBO IE = 50uA 5 DC Current Gain VCE = -3V , IC = -0.1A hFE VCE(sat) IC = 500mA , IB = 50mA Collector-emitter Saturation Voltage Transition Frequency fT Collector Output Capacitance Cob 82 390 0.15 0.4 V VCE = 5V , IE = -50mA , f = 100MHz 150 MHz VCB = 10V , IE = 0 , f = 1MHz 15 pF hFE Classification DA Marking Rank hFE P 82 Q 180 120 R 270 180 390 www.kexin.com.cn 1 Transistors SMD Type 2SD1664 Electrical Characteristics Curves 2 www.kexin.com.cn Transistors SMD Type 2SD1664 www.kexin.com.cn 3