Transistors SMD Type Power Switching Applications 2SC4541 Features Low Saturation Voltage: VCE(sat) = 0.5V (max) (IC = 1.5A) High Speed Switching Time: tstg = 0.5ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SA1736 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current IC 3 A Base Current IB 0.6 A PC 500 PC * 1000 Tj 150 Tstg -55 to +150 Collector Power Dissipation Jumction temperature Storage temperature Range mW 2 * Mounted on a ceramic substrate (250 mm x 0.8 t) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current ICBO VCB = 80V , IE = 0 0.1 ìA Emitter Cut-off Current IEBO VEB = 6V , IC = 0 0.1 ìA Collector-Emitter Breakdown Voltage DC Current Gain V(BR)CEO IC = 10mA , IB = 0 hFE VCE = 2V , IC = 100mA 120 VCE = 2V , IC = 2A 40 Collector-Emitter Saturation Voltage VCE(sat) IC = 1.5A , IB = 75mA Base-Emitter Saturation Voltage VBE(sat) IC = 1.5A , IB = 75mA Transition Frequency fT Collector Output Capacitance Cob Turn-On Time ton Storage Time Fall Time tstg tf 50 V 400 0.5 1.2 V V VCE = 2V , IC = 100mA 100 MHz VCB = 10V , IE = 0 , f = 1MHz 20 pF 0.1 See Test Circuit. 0.5 ìs 0.1 www.kexin.com.cn 1 Transistors SMD Type 2SC4541 Test Circuit Marking Marking KD Electrical Characteristics Curves 2 www.kexin.com.cn Transistors SMD Type 2SC4541 www.kexin.com.cn 3