Transistors SMD Type High-Voltage Switching Applications 2SA1418 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO -6 V Collector Current IC -0.7 A Collector Current (Pulse) ICP -1.5 A PC 500 mW PC * 1.3 W Tj 150 Tstg -55 to +150 Collector Power Dissipation Jumction temperature Storage temperature Range 2 * Mounted on ceramic board (250 mm x 0.8 mm) Electrical Characteristics Ta = 25 Max Unit Collector Cut-off Current Parameter Symbol ICBO VCB = -120V , IE = 0 Testconditons Min Typ -0.1 uA Emitter Cut-off Current IEBO VEB = -4V , IC = 0 -0.1 uA Collector-Base Breakdown Voltage V(BR)CBO IC = -10uA , IE = 0 -180 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = -1mA , RBE = -160 V Emitter-Base Breakdown Voltage V(BR)EBO IE = -10uA , IC = 0 -6 V DC Current Gain hFE VCE = -5V , IC = -100mA 100 400 Collector-Emitter Saturation Voltage VCE(sat) IC = -250mA , IB = -25mA -0.2 -0.5 V Base-Emitter Saturation Voltage VBE(sat) IC = -250mA , IB = -25mA -0.85 -1.2 V Gain-Bandwidth Product Collector Output Capacitance fT Cob Turn-On Time ton Storage Time tstg Fall Time tf VCE = -10V , IC = -50mA 120 MHz VCB = -10V , IE = 0 , f = 1MHz 11 pF See Test Circuit. 900 60 ns 60 www.kexin.com.cn 1 Transistors SMD Type 2SA1418 Test Circuit hFE Classification AD Marking Rank hFE R 100 S 200 140 Electrical Characteristics Curves 2 www.kexin.com.cn T 280 200 400 Transistors SMD Type 2SA1418 www.kexin.com.cn 3