Transistors SMD Type Power Switching Applications 2SA1213 Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -2 A Base Current IB -0.4 A PC 500 PC * 1000 Tj 150 Tstg -55 to +150 Collector Power Dissipation Jumction temperature Storage temperature Range mW 2 * Mounted on ceramic substrate (250 mm x 0.8 t) Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Symbol Testconditons ICBO VCB = -50V , IE = 0 IEBO VEB = -5V , IC = 0 V(BR)CEO IC = -10mA , IB = 0 hFE Min Typ Max Unit -0.1 ìA -0.1 ìA -50 VCE = -2V , IC = -0.5A 70 VCE = -2V , IC = -2.0A 20 V 240 Collector-Emitter Saturation Voltage VCE(sat) IC = -1A , IB = -0.05A -0.5 V Base-Emitter Saturation Voltage VBE(sat) IC = -1A , IB = -0.05A -1.2 V Transition Frequency fT Collector Output Capacitance Cob Turn-On Time ton Storage Time tstg Fall Time tf VCE = -2V , IC = -0.5A 120 MHz VCB = -10V , IE = 0 , f = 1MHz 40 pF 0.1 See Test Circuit. 1.0 ìs 0.1 www.kexin.com.cn 1 Transistors SMD Type 2SA1213 Test Circuit hFE Classification N Marking Rank hFE O 70 Y 140 120 Electrical Characteristics Curves 2 www.kexin.com.cn 240 Transistors SMD Type 2SA1213 www.kexin.com.cn 3