Diodes SMD Type Silicon Schottky Barrier Diode HRW0503A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 high effifiency rectifying. 0.55 Low forward voltage drop and suitable for 2 +0.1 0.95-0.1 +0.1 1.9-0.1 MPAK package is suittable for high density +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 surface mounting and high speed assembly. 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e p e titive p e a k re ve rs e vo lta g e S ym b o l V a lu e U n it V RRM 30 V IO 500 mA 5 A A ve ra g e re c tifie d c u rre n t N o n -re p e titive p e a k fo rw a rd s u rg e c u rre n t J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re IF S M (N o t e 1 ) Tj 125 T s tg -5 5 to + 1 2 5 N o te 1 . 5 0 H z s in e w a ve 1 p u ls e Electrical Characteristics T a = 25 Sym bol Conditions Forward voltage Param eter VF I F = 500 m A Reverse current IR V R = 30 V Capacitance C V R = 0 V, f = 1MHz Min Typ Max Unit 0.55 V 50 65 A pF Marking Marking S6 www.kexin.com.cn 1