Diodes SMD Type Silicon Schottky Barrier Diode HRW0703A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 high effifiency rectifying. 0.55 Low forward voltage drop and suitable for 2 +0.1 0.95-0.1 +0.1 1.9-0.1 MPAK package is suittable for high density +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 surface mounting and high speed assembly. 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e p e titiv e p e a k re v e rs e v o lta g e F o rw a rd c u rre n t N o n -re p e titiv e p e a k fo rw a rd s u rg e c u rre n t J u n c tio n te m p e ra tu re S ym bol V a lu e U n it VRRM 30 V IF 700 mA I F S M (N o te 1 ) 5 A Tj S to ra g e te m p e ra tu re T st 125 g -5 5 to + 1 2 5 N o te 1 . 5 0 H z s in e w a v e 1 p u ls e Electrical Characteristics Ta = 25 Parameter Symbol Conditions Forward voltage VF Reverse current IR Capacitance C V R = 0 V, f = 1MHz Thermal resistance R th( j-a ) Min Typ Max Unit I F = 700 mA 0.50 V V R = 30 V 100 150 Polyimide board 390 Ceramic board 290 A pF /W Marking Marking S8 www.kexin.com.cn 1