Diodes SMD Type Silicon Schottky Diodes BAT64 series SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 For low-loss,fast-recovery, meter protection bias isolation and clamping applications 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Integrated diffused guard ring +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low forward current 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym b o l M ax U n it D io d e re ve rs e vo lta g e VR 40 V F o rw a rd c u rre n t IF 250 mA A ve ra g e fo rw a rd c u rre n t (5 0 /6 0 H z,s in u s ) S u rg e fo rw a rd c u rre n t 10 m s) (t IF A V 120 mA IF S M 800 mA P to t 250 mW T o ta l p o w e r d is s ip a tio n T s = 6 1 J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re Tj 150 T stg -5 5 to + 1 5 0 J u n c tio n a m b ie n t (N o te 1 ) R th JA 495 KW J u n c tio n s o ld e rin g p o in t R th JS 355 KW N o te 1 . P a c k a g e m o u n te d o n e p o xy p c b 4 0 m m 40 m m m 1 .5 m m /0 .5 c m 2 C u Electrical Characteristics Ta = 25 Param eter Reverse current Sym bol IR Forward voltage Conditions Typ Max V R = 25 V,T A = 25 2 V R = 25 V,T A = 85 200 CT Unit A IF = 1 m A 320 350 mV I F = 10 m A 385 430 V I F = 30 m A 440 520 V I F = 100 m A 570 750 V V R = 1 V,f = 1 MHz 4 6 pF VF Diode capacitance Min Marking Type BAT64 BAT64-04 BAT64-05 BAT64-06 Marking 63s 64s 65s 66s www.kexin.com.cn 1