Diodes SMD Type Silicon Schottky Barrier Diode HSC226 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features Low reverse current, Low capacitance. + +0.1 0.6-0.1 - Ultra small Flat Package (UFP) is suitable for surface mount design. +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max Absolute M axim um Ratings Ta = 25 Sym bol Value Unit Repetitive peak reverse voltage Param eter V RRM 25 V Non-Repetitive peak forward surge current I FSM * 200 mA Forward current IF 50 mA Junction tem perature Tj 125 Storage tem perature T stg -55 to +125 Note 10m s Sinewave 1pulse Electrical Characteristics Ta = 25 Param eter Sym bol Forward voltage VF Conditions M in Typ M ax IF = 1 m A 0.33 IF = 5 m A 0.38 Unit V Reverse current IR V R = 20 V 0.45 A Capacitance C V R =1 V, f = 1 M Hz 2.80 pF Marking Marking S4 www.kexin.com.cn 1