KEXIN HSC226

Diodes
SMD Type
Silicon Schottky Barrier Diode
HSC226
SOD-523
+0.05
0.3-0.05
Unit: mm
+0.1
1.2-0.1
+0.05
0.8-0.05
Features
Low reverse current, Low capacitance.
+
+0.1
0.6-0.1
-
Ultra small Flat Package (UFP) is suitable for surface mount design.
+0.1
1.6-0.1
+0.05
0.1-0.02
0.07max
0.77max
Absolute M axim um Ratings Ta = 25
Sym bol
Value
Unit
Repetitive peak reverse voltage
Param eter
V RRM
25
V
Non-Repetitive peak forward surge current
I FSM *
200
mA
Forward current
IF
50
mA
Junction tem perature
Tj
125
Storage tem perature
T stg
-55 to +125
Note
10m s Sinewave 1pulse
Electrical Characteristics Ta = 25
Param eter
Sym bol
Forward voltage
VF
Conditions
M in
Typ
M ax
IF = 1 m A
0.33
IF = 5 m A
0.38
Unit
V
Reverse current
IR
V R = 20 V
0.45
A
Capacitance
C
V R =1 V, f = 1 M Hz
2.80
pF
Marking
Marking
S4
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