Diodes SMD Type Silicon Schottky Diode BAT62 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 40 V Reverse voltage Forward current Total power dissipation, T S 85 Junction tem perature Storage tem perature range IF 20 mA P tot 100 mW Tj 150 T stg -55 to + 150 Junction - am bient 1) R th JA 810 K/W Junction - soldering point R th JS 650 K/W Note 1.Package m ounted on alum ina 15 m m 16.7 m m 0.7 m m . Electrical Characteristics Ta = 25 Param eter Reverse current Sym bol Test Condition IR V R = 40 V Min Typ Max Unit 10 A Forward voltage IF IF = 2 m A 0.58 1 V Diode capacitance CT f = 1 MHz; V R = 0 0.35 0.6 pF V R = 0, f = 10 KHz 225 Case capacitance CC Differential resistance RO Series inductance LS 0.1 2 pF K nH Marking Marking 62 www.kexin.com.cn 1