KEXIN BAT62

Diodes
SMD Type
Silicon Schottky Diode
BAT62
Unit: mm
Features
Low barrier diode for detectors up to GHz frequencies.
Absolute Maxim um Ratings Ta = 25
Param eter
Sym bol
Value
Unit
VR
40
V
Reverse voltage
Forward current
Total power dissipation, T S
85
Junction tem perature
Storage tem perature range
IF
20
mA
P tot
100
mW
Tj
150
T stg
-55 to + 150
Junction - am bient 1)
R th JA
810
K/W
Junction - soldering point
R th JS
650
K/W
Note
1.Package m ounted on alum ina 15 m m
16.7 m m
0.7 m m .
Electrical Characteristics Ta = 25
Param eter
Reverse current
Sym bol
Test Condition
IR
V R = 40 V
Min
Typ
Max
Unit
10
A
Forward voltage
IF
IF = 2 m A
0.58
1
V
Diode capacitance
CT
f = 1 MHz; V R = 0
0.35
0.6
pF
V R = 0, f = 10 KHz
225
Case capacitance
CC
Differential resistance
RO
Series inductance
LS
0.1
2
pF
K
nH
Marking
Marking
62
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