Diodes SMD Type Silicon Dual Schottky Diode BAT14-099 Unit: mm Features DBS mixer application to 12 GHz Low noise figure Medium barrier type Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Reverse voltage VR 4 V Forward current IF 90 mA 55 P tot 100 mW Storage tem perature range T stg -55 to +150 Operating tem perature range T op -55 to +150 Power dissipation, T S Junction - am bient 1) Junction - soldering point R th JA 580 K/W R th JS 340 K/W Note 1.Package m ounted on alum ina 15 m m 16.7 m m to 0.7 m m . Electrical Characteristics Ta = 25 Parameter Breakdown voltage Symbol V BR Forward voltage VF Conditions IR = 5 A Min Typ Max 4 Unit V IF = 1 mA 0.43 IF = 10 mA 0.55 V ÄV F IF = 10 mA 10 mV Diode capacitance CT V R = 0 V, f = 1 MHz 0.35 pF Forward resistance RF IF = 10 mA / 50 mA Forward voltage matching 5.5 Marking Marking S9 www.kexin.com.cn 1