KEXIN MMBT3906W

Transistors
IC
SMD Type
General Purpose Transistor
MMBT3906W
Features
General purpose transistor.
Pb?Free package is available.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-emitter voltage
Parameter
VCEO
-40
V
Collector-base voltage
VCBO
-40
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-200
mA
Total Device Dissipation FR-5 Board
PD
150
mW
/W
Thermal Resistance, Junction-to-Ambient
RèJA
833
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
IC
SMD Type
MMBT3906W
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Max
Unit
V(BR)CEO IC = -1.0 mA, IB = 0
-40
V
Collector-base breakdown voltage
V(BR)CBO IC = -10 ìA, IE = 0
-40
V
Emitter-base breakdown voltage
V(BR)EBO IE = -10 ìA, IC = 0
-5
V
Base cutoff current
IBL
VCE = -30 V, VEB = -3.0 V
-50
nA
Collector cutoff current
ICEX
VCE = -30 V, VEB = -3.0 V
-50
nA
HFE
IC = -0.1 mA, VCE = -1.0 V
IC = -1.0 mA, VCE = -1.0 V
IC = -10 mA, VCE = -1.0 V
IC = -50 mA, VCE = -1.0 V
IC = -100 mA, VCE = -1.0 V
DC current gain *
Collector-emitter saturation voltage *
VCE(sat)
60
80
100
60
30
IC = -10 mA, IB = -1.0 mA
Base-emitter saturation voltage *
VBE(sat)
IC = -10 mA, IB = -1.0 mA
-0.4
-0.65
IC = -50 mA, IB = -5.0 mA
Current-gain-bandwidth product
fT
IC = -10 mA, VCE = -20 V, f = 100 MHz
300
-0.25
IC = -50 mA, IB = -5.0 mA
V
-0.85
-0.95
250
MHz
Output capacitance
Cobo
VCB = -5.0 V, IE = 0, f = 1.0 MHz
4.5
pF
Input capacitance
Cibo
VEB = -0.5 V, IC = 0, f = 1.0 MHz
10
pF
Input impedance
hie
VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz
2.0
12
kÙ
Voltage feedback ratio
hre
VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz
0.1
10
X10-4
Small-signal current gain
hfe
VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz
100
400
Output admittance
hoe
VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz
3.0
60
ìmhos
Noise figure
NF
VCE = -5.0 V, IC = -100 ìA, RS = 1.0 kÙ,
f = 1.0 kHz
4.0
dB
Delay time
td
VCC = -3.0 V, VBE = 0.5 V
35
ns
Rise time
tr
IC = -10 mA, IB1 = -1.0 mA
35
ns
Storage time
ts
VCC = -3.0 V, IC = -10 mA
225
ns
Fall time
tf
IB1 = IB2 = -1.0 mA
75
ns
300 ìs, duty cycle
* Pulse test: pulse width
Marking
Marking
2
Typ
Collector-emitter breakdown voltage
2A
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