2N4400 & 2N4401 Silicon NPN Transistor General Purpose TO92

2N4400 & 2N4401
Silicon NPN Transistor
General Purpose
TO92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/5C
Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.35C/W
Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2005C/W
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0, Note 1
40
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 0.1mA, IE = 0
60
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 0.1mA, IC = 0
6
−
−
V
Collector Cutoff Current
ICEX
VCE = 35V, VEB = 0.4V
−
−
0.1
5A
Base Cutoff Current
IBEV
VCE = 35V, VEB = 0.4V
−
−
0.1
5A
VCE = 1V, IC = 0.1mA
20
−
−
VCE = 1V, IC = 1mA
20
−
−
40
−
−
40
−
−
80
−
−
50
−
150
100
−
300
20
−
−
40
−
−
ON Characteristics (Note 1)
DC Current Gain
2N4401
2N4400
hFE
2N4401
2N4400
VCE = 1V, IC = 10mA
2N4401
2N4400
VCE = 1V, IC = 150mA
2N4401
2N4400
VCE = 2V, IC = 500mA
2N4401
Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.
Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IC = 150mA, IB = 15mA
−
−
0.4
V
IC = 500mA, IB = 50mA
−
−
0.75
V
IC = 150mA, IB = 15mA
0.75
−
0.95
V
IC = 500mA, IB = 50mA
−
−
1.2
V
200
−
−
MHz
250
−
−
MHz
ON Characteristics (Cont’d) (Note 1)
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Small−Signal Characteristics
Current Gain−Bandwidth Product
2N4400
fT
IC = 20mA, VCE = 10V, f = 100MHz
2N4401
Collector−Base Capacitance
Ccb
VCB = 5V, IE = 0, f = 100kHz
−
−
6.5
pF
Emitter−Base Capacitance
Ceb
VBE = 0.5V, IC = 0, f = 100kHz
−
−
30
pF
Input Impedance
2N4400
hie
IC = 1mA, VCE = 10V, f = 1kHz
0.5
−
7.5
k3
1.0
−
15
k3
IC = 1mA, VCE = 10V, f = 1kHz
0.1
−
8.0
x 10−4
IC = 1mA, VCE = 10V, f = 1kHz
20
2N4401
Voltage Feedback Ratio
hre
Small−Signal Current Gain
2N4400
hfe
2N4401
Output Admittance
hoe
−
250
40
−
500
1.0
−
30
5 mhos
VCC = 30V, VEB = 2V, IC = 150mA,
IB1 = 15mA
−
−
15
ns
−
−
20
ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
−
−
225
ns
−
−
30
ns
IC = 1mA, VCE = 10V, f = 1kHz
Switching Characteristics
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max