NTE123 Silicon NPN Transistor General Purpose Audio Amplifier, Switch Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.33mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 40 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 75 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 6 – – V VCE = 60V, IE = 0 – – 0.01 µA VCE = 60V, IE = 0, TA = +150°C – – 10 µA ICEX VCE = 60V, VEB(off) = 3V – – 10 nA IEBO VEB = 3V, IC = 0 – – 10 nA VCE = 60V, VEB(off) = 3V – – 20 nA OFF Characteristics Collector Cutoff Current Emitter Cutoff Current Base Cuttoff Current ICBO IBL Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 0.1mA, VCE = 10V 35 – – IC = 1mA, VCE = 10V 50 – – IC = 10mA, VCE = 10V 75 – – IC = 10mA, VCE = 10V, TA = –55°C 35 – – IC = 150mA, VCE = 10V 100 – 300 IC = 150mA, VCE = 1.0V 50 – – IC = 500mA, VCE = 10V 40 – – IC = 150mA, IB = 15mA – – 0.3 V IC = 500mA, IB = 50mA – – 1.0 V IC = 150mA, IB = 15mA 0.6 – 1.2 V IC = 500mA, IB = 50mA – – 2.0 V IC = 20mA, VCE = 20V, f = 100MHz, Note 2 300 – – MHz ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage hFE VCE(sat) VBE(sat) Small–Signal Characteristics Current Gain–Bandwidth Product fT Output Capacitance Cobo VCB = 10V, IE = 0, f = 100kHz – – 8 pF Input Capacitance Cibo VEB = 0.5V, IC = 0, f = 100kHz – – 25 pF hie IC = 1mA, VCE = 10V, f = 1kHz 2.0 – 8.0 kΩ IC = 10mA, VCE = 10V, f = 1kHz 0.25 – 1.25 kΩ IC = 1mA, VCE = 10V, f = 1kHz – – 8 x 10–4 IC = 10mA, VCE = 10V, f = 1kHz – – 4 x 10–4 IC = 1mA, VCE = 10V, f = 1kHz 50 – 300 IC = 10mA, VCE = 10V, f = 1kHz 75 – 375 IC = 1mA, VCE = 10V, f = 1kHz 5.0 – 35 µmhos IC = 10mA, VCE = 10V, f = 1kHz 25 – 200 µmhos IE = 20mA, VCB = 20V, f = 31.8MHz – – 150 ps IC = 100µA, VCE = 10V, RS = 1kΩ, f = 1kHz – – 4 dB IC = 20mA, VCE = 20V, f = 300MHz – – 60 Ω VCC = 30V, VBE(off) = 0.5V, IC = 150mA, IB1 = 15mA – – 10 ns – – 25 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA – – 225 ns – – 60 ns IC = 150mA, VCE = 30V – – 2.5 ns Input Impedance Voltage Feedback Ratio Small–Signal Current Gain Output Admittance Collector–Base Time Constant Noise Figure Real Part of Common–Emitter High Frequency Input Impedance hre hfe hoe rb′Cc NF Re(hie) Switching Characteristics Delay Time tq Rise Time tr Storage Time ts Fall Time tf Active Region Time Constant TA Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45° .031 (.793)