KEXIN RB411D

Diodes
SMD Type
Schottky Barrier Diode
KB411D(RB411D)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
High reliability.
0.55
Low VF. (VF=0.43V Typ. at 0.5A)
+0.1
1.3-0.1
+0.1
2.4-0.1
Small surface mounting type
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
Silicon epitaxial planar
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Reverse voltage
VRM
40
V
DC Reverse voltage
VR
20
V
Mean rectifying current
Io
0.5
A
IFSM
3
A
Forward current surge peak
Junction temperature
Tj
125
Storage temperature
Tstg
-40 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Forwarad voltage
Max
Unit
VF 1
IF=500mA
Testconditons
0.50
V
VF 2
IF=10mA
0.30
V
Reverse current
IR1
VR=10V
Capacitance between terminal
CT
VR=10V , f=1MHz
Min
Typ
30
20
A
pF
Marking
Marking
D3E
www.kexin.com.cn
1