Diodes SMD Type Schottky Barrier Diode KB411D(RB411D) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High reliability. 0.55 Low VF. (VF=0.43V Typ. at 0.5A) +0.1 1.3-0.1 +0.1 2.4-0.1 Small surface mounting type 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Silicon epitaxial planar 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Reverse voltage VRM 40 V DC Reverse voltage VR 20 V Mean rectifying current Io 0.5 A IFSM 3 A Forward current surge peak Junction temperature Tj 125 Storage temperature Tstg -40 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Forwarad voltage Max Unit VF 1 IF=500mA Testconditons 0.50 V VF 2 IF=10mA 0.30 V Reverse current IR1 VR=10V Capacitance between terminal CT VR=10V , f=1MHz Min Typ 30 20 A pF Marking Marking D3E www.kexin.com.cn 1