OPD3030 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY unit : ㎛ 1. Structure 1.1 Chip Size : 3.00mm X 3.00mm 1.2 Chip thickness : 400±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode(top) : 160um X 160um 1.6 Active Area : 2.86mm X 2.86mm 2. Electro-Optical Characteristics Parameter Min Typ Open Circuit Voltage 0.3 0.32 V Note(1) Short Circuit Current ISC 69 86 ㎂ Note(1) Spectrum Sensitivity 430 ∼ 1,100 ㎚ Peak Sensing Wavelength λ λP 940 ㎚ Forward Voltage VF Dark Current ID 0.5 Max Unit (Ta=25℃) Test Condition Symbol VOP 1.3 V IF=10㎃ 10 ㎁ VR=10V BVR Reverse Breakdown Voltage 30 V Note(1):Parallel light of 1,000Lux illumination is applied by a Tungsten lamp o 3. Maximum Ratings Parameter Reverse Breakdown Voltage Junction Temperature (Ta=25℃) Symbol Maximum rating Unit 30 BVR V ℃ 150 TJ AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr IR=10㎂