LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY LA112B/H.DBK DATA SHEET DOC. NO : QW0905-LA 112B/H.DBK REV. : B DATE : 17 - Jan - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/5 PART NO. LA112B/H.DBK Package Dimensions 2.5±0.5 4.3 H 8.2 2.9 5.0 9.6 DBK 2.65 □0.5 TYP 3.2±0.3 4.45±0.5 2.54TYP + 6.99±0.5 LH2640-1 LDBK2640 2.9 3.1 3.3 4.3 1.5MAX 25.0MIN □0.5 TYP 1.0MIN 2.54TYP Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA112B/H.DBK Page 2/5 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT DBK H Forward Current IF 30 15 mA Peak Forward Current Duty 1/10@10KHz IFP 100 60 mA Power Dissipation PD 120 40 mW Reverse Current @5V Ir 50 10 μA Electrostatic Discharge ESD 150 ----- V Operating Temperature Topr -20 ~ +80 ℃ Storage Temperature Tstg -30 ~ +100 ℃ Soldering Temperature Tsol Max 260 ℃ for 5 sec Max (2mm from body) Typical Electrical & Optical Characteristics (Ta=25 ℃) COLOR PART NO MATERIAL Emitted GaP LA112B/H.DBK Red Lens Red Diffused COLOR MATERIAL Emitted InGaN/GaN Blue Forward Peak Spectral voltage wave halfwidth length △λ nm @20mA(V) λPnm 697 90 Blue Diffused 470 30 Viewing angle @ 10 mA(mcd) 2θ 1/2 (deg) Min. Max. Min. Typ. 1.7 4.2 2.6 Forward Dominant Spectral voltage Wave halfwidth Length △λ nm @20mA(V) λDnm Lens Luminous intensity 1.8 Luminous intensity Viewing angle @ 20 mA(mcd) 2θ 1/2 (deg) Typ. Max. Min. Typ. 3.5 450 4.0 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 50 220 38 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page3/5 PART NO. LA112B/H.DBK Typical Electro-Optical Characteristics Curve H CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.0 2.0 4.0 3.0 5.0 1.0 10 Fig.4 Relative Intensity vs. Temperature 1.2 Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ Fig.3 Forward Voltage vs. Temperature 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 100 Relative Intensity@20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 700 800 900 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature(℃) 600 1000 Forward Current(mA) Forward Voltage(V) -40 100 1000 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA112B/H.DBK Page 4/5 Typical Electro-Optical Characteristics Curve DBK CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1 01 2.5 2.0 1.5 1.0 0.5 0.0 1.0 2.0 4.0 3.0 5.0 1 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 400 450 500 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature(℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 550 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA112B/H.DBK Page 5/5 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11