LIGITEK LBD101-28YGH-XX

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
BAR DIGIT LED DISPLAY
LBD101/28YGH-XX
DATA SHEET
DOC. NO
:
QW0905- LBD101/28YGH-XX
REV.
:
A
DATE
: 31 - May - 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LBD101/28YGH-XX
Page 1/9
Package Dimensions
Y Y Y Y Y Y Y Y GH
1.75(0.069")
5.0
(0.197")
10.1
(0.398")
ORIENTATION
MARK
LBD101/28YGH-XX
LIGITEK
25.3(0.996")
8.0(0.315")
6.0±0.5
ψ0.45
TYP
22.4(0.882")
PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
7.6
(0.299")
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LBD101/28YGH-XX
Page 2/9
Internal Circuit Diagram
LBD101/8YGH-XX
20 19 18 17 16 15 14 13 12 11
1 2 3 4 5 6 7 8 9 10
LBD102/8YGH-XX
20 19 18 17 16 15 14 13 12 11
1 2 3 4 5 6 7 8 9 10
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/9
PART NO. LBD101/28YGH-XX
Electrical Connection
PIN NO.
LBD101/8YGH-XX
1.
Anode
11.
Cathode
2.
Anode
12.
Cathode
3.
Anode
13.
Cathode
4.
Anode
14.
Cathode
5.
Anode
15.
Cathode
6.
Anode
16.
Cathode
7.
Anode
17.
Cathode
8.
Anode
18.
Cathode
9.
Anode
19.
Cathode
10.
Anode
20.
Cathode
PIN11.
NO.
LBD102/8YGH-XX
1.
Cathode
11.
Anode
2.
Cathode
12.
Anode
3.
Cathode
13.
Anode
4.
Cathode
14.
Anode
5.
Cathode
15.
Anode
6.
Cathode
16.
Anode
7.
Cathode
17.
Anode
8.
Cathode
18.
Anode
9.
Cathode
19.
Anode
10.
Cathode
20.
Anode
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 4/9
PART NO. LBD101/28YGH-XX
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
Y
G
H
Forward Current Per Chip
IF
20
30
15
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
80
120
60
mA
Power Dissipation Per Chip
PD
60
100
40
mW
Ir
10
10
10
μA
Reverse Current Per Any Chip
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
CHIP
PART NO
Material
common
cathode
Emitted or anode
GaAsP/GaP Yellow
LBD101/28YGH-XX
GaP
GaP
Common
Cathode
Green
Red
Common
Anode
Electrical
λP
△λ
(nm)
(nm)
Vf(v)
Min.
Iv(mcd)
Typ. Max. Min.
Typ.
585
35
1.7
2.1
2.6
1.75 3.05
565
30
1.7
2.1
2.6
2.35 3.05
697
90
1.7
2.1
2.6
0.5
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
IV-M
0.9
2:1
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 5/9
PART NO. LBD101/28YGH-XX
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Wavelength
λp
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
P6
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LBD101/28YGH-XX
Page 6/9
Typical Electro-Optical Characteristics Curve
Y CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
1.0
2.0
3.0
4.0
5.0
1.0
10
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25 ℃
Forward Voltage@20mA
Normalize @25 ℃
1.2
1.1
1.0
0.9
0.8
-20
0
20
40
60
80
100
Relative Intensity@20mA
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
500
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
700
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 7/9
PART NO. LBD101/28YGH-XX
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
2.0
1.0
3.0
4.0
5.0
1.0
10
Fig.4 Relative Intensity vs. Temperature
1.2
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25 ℃
Fig.3 Forward Voltage vs. Temperature
1.1
1.0
0.9
0.8
-20
0
20
40
60
80
100
Relative Intensity@20mA
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature(℃)
Ambient Temperature( ℃)
500
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page8/9
PART NO. LBD101/28YGH-XX
Typical Electro-Optical Characteristics Curve
H CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
1.0
2.0
3.0
4.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
600
700
800
900
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature(℃)
Ambient Temperature(℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25 ℃
Forward Voltage@20mA
Normalize @25 ℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
1000
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LBD101/28YGH-XX
Page 9/9
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95 %
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
1.Ta=105 ℃±5 ℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11