LIGITEK LBD1B2A-XX

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
★ BAR DIGIT LED DISPLAY
LBD1B2A-XX
DATA SHEET
DOC. NO
:
QW0905- LBD1B2A-XX
REV.
:
A
DATE
: 20 - Apr. - 2006
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/10
PART NO. LBD1B2A-XX
Package Dimensions
45.5(1.791")
6.0
(0.236")
4.9X8=39.2(1.543")
G
7.7
(0.303")
Y
G
Y
E
R
E
E
5.5
(0.217")
1.5
(0.059")
E
4.0
(0.157")
Ø0.45
TYP
4.0
(0.157")
2.54X10=25.4
(1.0")
3.2±0.5
PIN NO.1
LBD1B2A-XX
LIGITEK
Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
1.0MIN
2.0
(0.079")
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Property of Ligitek Only
PART NO. LBD1B2A-XX
Page 2/10
Internal Circuit Diagram
LBD1B2A-XX
1, 11
UG HYS UG HYS HE HRF HE
HE HE
2 3 4 5 6 7 8 9 10
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Property of Ligitek Only
PART NO. LBD1B2A-XX
Page 3/10
Electrical Connection
PIN NO.1
LBD1B2A-XX
1
Common Anode
2
Cathode Green
3
Cathode Yellow
4
Cathode Green
5
Cathode Yellow
6
Cathode Orange
7
Cathode Red
8
Cathode Orange
9
Cathode Orange
10
Cathode Orange
10
Common Anode
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LBD1B2A-XX
Page 4/10
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
UG
HYS
HE
HRF
Forward Current Per Chip
IF
30
30
30
30
mA
Peak Forward Current PerChip
(Duty 1/10,0.1ms Pulse Width)
IFP
120
60
60
90
mA
Power Dissipation Per Chip
PD
100
75
75
75
mW
Ir
10
μA
Electrostatic Discharge( * )
ESD
2000
μA
Operating Temperature
Topr
-40 ~ +85
℃
Storage Temperature
Tstg
-40 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
Material Emitted or anode
CHIP
PART NO
AlGaInP Green
AlGaInP Yellow
LBD1B2A-XX
AlGaInP Orange
AlGaInP Red
Common
Anode
Electrical
λD
(nm)
△λ
Vf(v)
(nm)
Iv(mcd)
IV-M
Min. Typ. Max. Min. Typ.
574
20
1.7
2.1
2.6
10.5
18
2:1
587
15
1.7
2.1
2.6
21.5
35
2:1
620
17
1.7
2.1
2.6
10.5 21.5
630
20
1.5
1.7
2.4
21.5
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
35
2:1
2:1
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Property of Ligitek Only
PART NO. LBD1B2A-XX
Page 5/10
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
λD
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Dominant Wavelength
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
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Property of Ligitek Only
PART NO. LBD1B2A-XX
Page 6/10
Typical Electro-Optical Characteristics Curve
UG CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
1.0
2.0
4.0
3.0
5.0
1.0
10
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
3.0
Relative Intensity@20mA
Normalize @25℃
1.2
Forward Voltage@20mA
Normalize @25℃
1000
Forward Current(mA)
Forward Voltage(V)
1.1
1.0
0.9
0.8
-40
-20
0
20
60
40
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
100
650
100
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Page7/10
PART NO. LBD1B2A-XX
Typical Electro-Optical Characteristics Curve
HYS CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
1.5
1.0
2.0
2.5
3.0
1.0
10
Fig.4 Relative Intensity vs. Temperature
Fig.3 Forward Voltage vs. Temperature
1.2
3.0
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
1000
Forward Current(mA)
Forward Voltage(V)
1.1
1.0
0.9
0.8
-40
-20
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
100
650
100
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PART NO. LBD1B2A-XX
Page 8/10
Typical Electro-Optical Characteristics Curve
HE CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
1.5
2.0
2.5
3.0
1.0
10
Fig.4 Relative Intensity vs. Temperature
Fig.3 Forward Voltage vs. Temperature
2.0
Relative Intensity@20mA
Normalize @25℃
1.2
Forward Voltage@20mA
Normalize @25℃
1000
Forward Current(mA)
Forward Voltage(V)
1.1
1.0
0.9
0.8
-40
-20
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
Wavelength (nm)
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
100
700
100
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Page 9/10
PART NO. LBD1B2A-XX
Typical Electro-Optical Characteristics Curve
HRF CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0
0.1
1.0
1.5
2.0
2.5
3.0
1.0
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
3.0
Relative Intensity@20mA
Normalize@25 ℃
1.2
Forward Voltage@20mA
Normalize @25℃
1000
Forward Current(mA)
Forward Voltage(V)
1.1
1.0
0.9
0.8
-40
-20
-0
20
40
60
80
100
Ambient Temperature( ℃)
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
100
10
1.0
0.5
0
550
600
650
Wavelength (nm)
700
2.5
2.0
1.5
1.0
0.5
0
-40
-20
-0
20
40
60
80
Ambient Temperature( ℃)
100
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Page 10/10
PART NO. LBD1B2A-XX
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5 ℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5 ℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5 ℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11