LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only BAR DIGIT LED DISPLAY LBD6118DBK-00 DATA SHEET DOC. NO : QW0905- LBD6118DBK-00 REV. : A DATE : 27 - May - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/6 PART NO. LBD6118DBK-00 Package Dimensions 18+0.05 -0.00 16±0.25 2+0.20 -0.00 14 Ø 0.6 TYP 1 2 12.7 17.3+0.00 -0.20 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD6118DBK-00 Page 2/6 Internal Circuit Diagram 1 2 Electrical Connection PART NO. : LBD6118DBK-00 PIN NO. 1 Cathode 2 Anode LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD6118DBK-00 Page 3/6 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT DBK Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 100 mA Power Dissipation Per Chip PD 120 mW Ir 50 μA Electrostatic Discharge( * ) ESD 150 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic * glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Part Selection And Application Information(Ratings at 25℃) Electrical CHIP PART NO Material LBD6118DBK-00 InGaN/GaN λD (nm) △λ (nm) Emitted Blue 470 30 Vf(v) Typ. Max. 10.5 12 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. Iv(mcd) IV-M Min. Typ. 78.5 145 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD6118DBK-00 Page 4/6 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Vf volt If=20mA Luminous Intensity Iv mcd If=20mA λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/6 PART NO. LBD6118DBK-00 Typical Electro-Optical Characteristics Curve DBK CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1 01 2.5 2.0 1.5 1.0 0.5 0.0 2.0 1.0 3.0 5.0 4.0 1 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 400 450 500 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 550 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD6118DBK-00 Page 6/6 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11