LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DUAL DIGIT LED DISPLAY (0.56 lnch) LDD511/25-XX/RP65 DATA SHEET DOC. NO : QW0905-LDD511/25-XX/RP65 REV. : A DATE : 25 - May. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LDD511/25-XX/RP65 Package Dimensions 25.0(0.984") DIG.1 14.2 (0.56") 8.1(0.319") DIG.2 19.0 (0.748") LDD511/25-XX/RP65 LIGITEK ψ1.7(0.067") 6.5±0.5 Ø 0.51 TYP 2.54X8=20.32 (0.8") PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. 15.24 (0.6") LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD511/25-XX/RP65 Page 2/7 Internal Circuit Diagram LDD5115-XX/RP65 14 13 DIG.1 DIG.2 A B C D E F G DP 16 15 3 2 1 18 17 4 A B C D E F G DP 11 10 8 6 5 12 7 9 LDD5125-XX/RP65 13 14 DIG.1 A B C D E F G DP 16 15 3 2 1 18 17 4 DIG.2 A B C D E F G DP 11 10 8 6 5 12 7 9 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD511/25-XX/RP65 Page 3/7 Electrical Connection PIN NO. LDD5115-XX/RP65 PIN NO. LDD5125-XX/RP65 1 Anode E Dig.1 1 Cathode E Dig.1 2 Anode D Dig.1 2 Cathode D Dig.1 3 Anode C Dig.1 3 Cathode C Dig.1 4 Anode DP Dig.1 4 Cathode DP Dig.1 5 Anode E Dig.2 5 Cathode E Dig.2 6 Anode D Dig.2 6 Cathode D Dig.2 7 Anode G Dig.2 7 Cathode G Dig.2 8 Anode C Dig.2 8 Cathode C Dig.2 9 Anode DP Dig.2 9 Cathode DP Dig.2 10 Anode B Dig.2 10 Cathode B Dig.2 11 Anode A Dig.2 11 Cathode A Dig.2 12 Anode F Dig.2 12 Cathode F Dig.2 13 Common Cathode Dig.2 13 Common Anode Dig.2 14 Common Cathode Dig.1 14 Common Anode Dig.1 15 Anode B Dig.1 15 Cathode B Dig.1 16 Anode A Dig.1 16 Cathode A Dig.1 17 Anode G Dig.1 17 Cathode G Dig.1 18 Anode F Dig.1 18 Cathode F Dig.1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LDD511/25-XX/RP65 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SR Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 100 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Material Emitted CHIP PART NO λP (nm) △λ Vf(v) (nm) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. Common Cathode LDD5115-XX/RP65 GaAlAs LDD5125-XX/RP65 Electrical 660 Red 20 1.5 1.8 Common Anode Note : 1.The forward voltage data did not including ± 0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.4 5.0 7.2 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LDD511/25-XX/RP65 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λP nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD511/25-XX/RP65 Page 6/7 Typical Electro-Optical Characteristics Curve SR CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 1.0 5.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 650 700 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 750 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LDD511/25-XX/RP65 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11