LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only FOUR DIGIT LED DISPLAY(0.39Inch) Pb Lead-Free Parts LFD4H5/62-XX/RP3-PF DATA SHEET DOC. NO : QW0905-LFD4H5/62-XX/RP3-PF REV. : A DATE : 02 - Jun. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/8 PART NO. LFD4H5/62-XX/RP3-PF Package Dimensions 6.4 (0.252") 39.2(1.543") 10.16 (0.4") DIG.1 DIG.2 DP1 DIG.3 DIG.4 12.9 (0.508") 10.28 (0.405") DP2 ψ1.4 (0.055") ψ0.45TYP A LFD4H5/62-XX/RP3-PF LIGITEK F G B E C D DP 3.0±0.5 PIN 1 2.54*4 =10.16 PIN 5 10.16 2.54*4 =10.16 PIN 6 PIN 10 PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD4H5/62-XX/RP3-PF Page 2/8 Internal Circuit Diagram LFD4H52-XX/RP3-PF 20 DIG.1 5 15 DIG.2 A B C D E F G DIG.3 A B C D E F G DP1 17 16 4 1 3 18 19 2 10 DIG.4 A B C D E F G A B C D E F G DP2 12 11 9 6 8 13 14 7 LFD4H62-XX/RP3-PF 20 DIG.1 A B C D E F G 17 16 4 1 3 18 19 5 15 DIG.2 DIG.3 A B C D E F G DP1 2 A B C D E F G 12 11 9 6 8 13 14 10 DIG.4 A B C D E F G DP2 7 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD4H5/62-XX/RP3-PF Page 3/8 Electrical Connection PIN NO LFD4H52-XX/RP3-PF PIN NO LFD4H62-XX/RP3-PF 1 Anode D (Dig.1,Dig.2) 1 Cathode D (Dig.1,Dig.2) 2 Anode 1 2 Cathode DP1 3 Anode E (Dig.1,Dig.2) 3 Cathode E (Dig.1,Dig.2) 4 Anode C (Dig.1,Dig.2) 4 Cathode C (Dig.1,Dig.2) 5 Common Cathode Dig.2 5 Common Anode Dig.2 6 Anode D (Dig.3,Dig.4) 6 Cathode D (Dig.3,Dig.4) 7 Anode DP2 7 Cathode DP2 8 Anode E (Dig.3,Dig.4) 8 Cathode E (Dig.3,Dig.4) 9 Anode C (Dig.3,Dig.4) 9 Cathode C (Dig.3,Dig.4) 10 Common Cathode Dig.4 10 Common Anode Dig.4 11 Anode B (Dig.3,Dig.4) 11 Cathode B (Dig.3,Dig.4) 12 Anode A (Dig.3,Dig.4) 12 Cathode A (Dig.3,Dig.4) 13 Anode F (Dig.3,Dig.4) 13 Cathode F (Dig.3,Dig.4) 14 Anode G (Dig.3,Dig.4) 14 Cathode G (Dig.3,Dig.4) 15 Common Cathode Dig.3 15 Common Anode Dig.3 16 Anode B (Dig.1,Dig.2) 16 Cathode B (Dig.1,Dig.2) 17 Anode A (Dig.1,Dig.2) 17 Cathode A (Dig.1,Dig.2) 18 Anode F (Dig.1,Dig.2) 18 Cathode F (Dig.1,Dig.2) 19 Anode G (Dig.1,Dig.2) 19 Cathode G (Dig.1,Dig.2) 20 Common Cathode Dig.1 20 Common Anode Dig.1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD4H5/62-XX/RP3-PF Page 4/8 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT G Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 120 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode Material Emitted or anode CHIP PART NO △λ (nm) (nm) Vf(v) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. Common Cathode LFD4H52-XX/RP3-PF GaP LFD4H62-XX/RP3-PF Electrical λP 565 Green 30 1.7 2.1 Common Anode Note : 1.The forward voltage data did not including ± 0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.6 1.75 3.05 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/8 PART NO. LFD4H5/62-XX/RP3-PF Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λp nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD4H5/62-XX/RP3-PF Page 6/8 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity @20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 Fig.6 Directive Radiation 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD4H5/62-XX/RP3-PF Page 7/8 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One Time) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260° C 2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2°C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260°C Temp(°C) 260° C3sec Max 260° 5° /sec max 120° 25° 0° 0 2° /sec max Preheat 60 Seconds Max 50 100 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD4H5/62-XX/RP3-PF Page 8/8 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11