LIGITEK LFD4H5-62-XX-RP3-PF

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
FOUR DIGIT LED DISPLAY(0.39Inch)
Pb
Lead-Free Parts
LFD4H5/62-XX/RP3-PF
DATA SHEET
DOC. NO :
QW0905-LFD4H5/62-XX/RP3-PF
REV.
:
A
DATE
:
02 - Jun. - 2006
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/8
PART NO. LFD4H5/62-XX/RP3-PF
Package Dimensions
6.4
(0.252")
39.2(1.543")
10.16
(0.4")
DIG.1
DIG.2 DP1 DIG.3
DIG.4
12.9
(0.508")
10.28
(0.405")
DP2
ψ1.4
(0.055")
ψ0.45TYP
A
LFD4H5/62-XX/RP3-PF
LIGITEK
F G B
E
C
D DP
3.0±0.5
PIN 1
2.54*4
=10.16
PIN 5
10.16
2.54*4
=10.16
PIN 6
PIN 10
PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LFD4H5/62-XX/RP3-PF
Page 2/8
Internal Circuit Diagram
LFD4H52-XX/RP3-PF
20
DIG.1
5
15
DIG.2
A B C D E F G
DIG.3
A B C D E F G DP1
17 16 4 1 3 18 19
2
10
DIG.4
A B C D E F G
A B C D E F G DP2
12 11 9 6 8 13 14
7
LFD4H62-XX/RP3-PF
20
DIG.1
A B C D E F G
17 16 4 1 3 18 19
5
15
DIG.2
DIG.3
A B C D E F G DP1
2
A B C D E F G
12 11 9 6 8 13 14
10
DIG.4
A B C D E F G DP2
7
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LFD4H5/62-XX/RP3-PF
Page 3/8
Electrical Connection
PIN NO
LFD4H52-XX/RP3-PF
PIN NO
LFD4H62-XX/RP3-PF
1
Anode D (Dig.1,Dig.2)
1
Cathode D (Dig.1,Dig.2)
2
Anode
1
2
Cathode DP1
3
Anode E (Dig.1,Dig.2)
3
Cathode E (Dig.1,Dig.2)
4
Anode C (Dig.1,Dig.2)
4
Cathode C (Dig.1,Dig.2)
5
Common Cathode Dig.2
5
Common Anode Dig.2
6
Anode D (Dig.3,Dig.4)
6
Cathode D (Dig.3,Dig.4)
7
Anode DP2
7
Cathode DP2
8
Anode E (Dig.3,Dig.4)
8
Cathode E (Dig.3,Dig.4)
9
Anode C (Dig.3,Dig.4)
9
Cathode C (Dig.3,Dig.4)
10
Common Cathode Dig.4
10
Common Anode Dig.4
11
Anode B (Dig.3,Dig.4)
11
Cathode B (Dig.3,Dig.4)
12
Anode A (Dig.3,Dig.4)
12
Cathode A (Dig.3,Dig.4)
13
Anode F (Dig.3,Dig.4)
13
Cathode F (Dig.3,Dig.4)
14
Anode G (Dig.3,Dig.4)
14
Cathode G (Dig.3,Dig.4)
15
Common Cathode Dig.3
15
Common Anode Dig.3
16
Anode B (Dig.1,Dig.2)
16
Cathode B (Dig.1,Dig.2)
17
Anode A (Dig.1,Dig.2)
17
Cathode A (Dig.1,Dig.2)
18
Anode F (Dig.1,Dig.2)
18
Cathode F (Dig.1,Dig.2)
19
Anode G (Dig.1,Dig.2)
19
Cathode G (Dig.1,Dig.2)
20
Common Cathode Dig.1
20
Common Anode Dig.1
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LFD4H5/62-XX/RP3-PF
Page 4/8
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
G
Forward Current Per Chip
IF
30
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
120
mA
Power Dissipation Per Chip
PD
100
mW
Ir
10
μA
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
Material Emitted or anode
CHIP
PART NO
△λ
(nm)
(nm)
Vf(v)
Iv(mcd)
IV-M
Min. Typ. Max. Min. Typ.
Common
Cathode
LFD4H52-XX/RP3-PF
GaP
LFD4H62-XX/RP3-PF
Electrical
λP
565
Green
30
1.7
2.1
Common
Anode
Note : 1.The forward voltage data did not including ± 0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
2.6
1.75 3.05
2:1
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 5/8
PART NO. LFD4H5/62-XX/RP3-PF
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Wavelength
λp
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LFD4H5/62-XX/RP3-PF
Page 6/8
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity
@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
Fig.6 Directive Radiation
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LFD4H5/62-XX/RP3-PF
Page 7/8
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350° C Max
Soldering Time:3 Seconds Max(One Time)
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260° C
2.Wave Soldering Profile
Dip Soldering
Preheat: 120° C Max
Preheat time: 60seconds Max
Ramp-up
2°C/sec(max)
Ramp-Down:-5° C/sec(max)
Solder Bath:260° C Max
Dipping Time:3 seconds Max
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260°C
Temp(°C)
260° C3sec Max
260°
5° /sec
max
120°
25°
0° 0
2° /sec
max
Preheat
60 Seconds Max
50
100
150
Time(sec)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LFD4H5/62-XX/RP3-PF
Page 8/8
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
Thermal Shock Test
1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11