LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only FOUR DIGIT LED DISPLAY (0.39 Inch) LFD4K5/6SBKS-XX/F2 DATA SHEET DOC. NO : QW0905- LFD4K5/6SBKS-XX/F2 REV. : A DATE : 31 - May.- 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD4K5/6SBKS-XX/F2 Page 1/7 Package Dimensions 7.0(0.276") 40.18(1.582") DIG.2 DIG.1 10.0 (0.39") L1 DIG.3 L3 DIG.4 L2 12.8 (0.504") 10.5¡ Ó 0.5 DP 1.2 ψ0.51 TYP 17.5MIN 2.54*13=33.02 LFD4K5/6SBKS-XX/F2 LIGITEK A F G E B C D DP PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LFD4K5/6SBKS-XX/F2 Internal Circuit Diagram LFD4K5SBKS-XX/F2 14 13 12 11 10 9 8 7 A DIG.1 B C D 5 E F G DP LFD4K6SBKS-XX/F2 14 13 12 11 10 9 8 7 A DIG.1 B C D 5 E F G DP A DIG.2 B C D 4 E F G DP A DIG.2 B C D 4 E F G DP A DIG.3 B C D 2 E F G DP A DIG.3 B C D 2 E F G DP A DIG.4 B C D 1 E F G DP A DIG.4 B C D 1 E F G DP L1 L2 L3 3 L1 L2 L3 3 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LFD4K5/6SBKS-XX/F2 Electrical Connection PIN NO.1 LFD4K5SBKS-XX/F2 PIN NO.1 LFD4K6SBKS-XX/F2 1 Common Cathode Dig.4 1 Common Anode Dig.4 2 Common Cathode Dig.3 2 Common Anode Dig.3 3 Catgide L1,L2,L3 3 Anode L1,L2,L3 4 Common Cathode Dig.2 4 Common Anode Dig.2 5 Common Cathode Dig.1 5 Common Anode Dig.1 6 NO CONNECT 6 NO CONNECT 7 Anode DP 7 Cathode DP 8 Anode G 8 Cathode G 9 Anode F 9 Cathode F 10 Anode E 10 Cathode E 11 Anode D 11 Cathode D 12 Anode C,L3 12 Cathode C,L3 13 Anode B,L2 13 Cathode B,L2 14 Anode A,L1 14 Cathode A,L1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LFD4K5/6SBKS-XX/F2 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SBKS Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 100 mA Power Dissipation Per Chip PD 120 mW Ir 50 μA ESD 500 V Reverse Current Per Any Chip Electrostatic Discharge Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Emitted CHIP PART NO Material △λ Vf(v) (nm) Iv(mcd) Typ. Max. Min. Typ. 3.5 8.5 IV-M Common Anode LFD4K5SBKS-XX/F2 InGaN/SiC LFD4K6SBKS-XX/F2 Electrical λD (nm) 475 Blue 26 Common Cathode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 4.2 5.0 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD4K5/6SBKS-XX/F2 Page 5/7 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Dominant Wavelength λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LFD4K5/6SBKS-XX/F2 Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.2 Relative Intensity vs. Forward Current 30 1.5 Relative Intensity Normalize @20mA Forward Current(mA) Fig.1 Forward current vs. Forward Voltage 25 20 15 10 5 0 1 2 3 4 1.25 1.0 0.75 0.5 0.25 0 5 0 5 Relative Intensity@20mA Forward Current@20mA 40 30 20 10 0 50 75 Ambient Temperature( ℃) 20 25 30 Fig.4 Relative Intensity vs. Wavelength Fig.3 Forward Current vs. Temperature 25 15 Forward Current(mA) Forward Voltage(V) 0 10 100 1.0 0.5 0 380 430 480 530 580 Wavelength (nm) 630 680 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD4K5/6SBKS-XX/F2 Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5 ℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11