LIGITEK LMD8821-2BEGR-XX

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
DOT MATRIX DIGIT LED DISPLAY (2.3Inch)
LMD8821/2BEGR-XX
DATA SHEET
DOC. NO
:
QW0905- LMD8821/2BEGR-XX
REV.
: A
DATE
: 08 - Feb. - 2006
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LMD8821/2BEGR-XX
Page 1/9
Package Dimensions
9.0
(0.35")
60.2(2.37")
7.54X7=52.78(2.08")
7.54X7
=52.78
(2.08")
60.2
(2.37")
45.75
(1.8")
LMD8821/2BEGR-XX
LIGITEK
ψ0.5
TYP
2.54*11=27.94(1.1")
5.5±0.5
PIN 1
Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LMD8821/2BEGR-XX
Page 2/9
Internal Circuit Diagram
LMD8821BEGR-XX
5
1
2
3
4
6
23 24 20 21 17 18 14 15 2 1 5 4
COLUMN
ROW PIN
7
8
7 11 10
8
1 22
2 19
3 16
4 13
5
3
6
6
7
9
8 12
LMD8822BEGR-XX
COLUMN
ROW PIN
3
5
1
2
4
23 24 20 21 17 18 14 15 2 1
6
5
7
4
8
8 7 11 10
1 22
2 19
3 16
4 13
5
3
6
6
7
9
8 12
RED
GREEN
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/9
PART NO. LMD8821/2BEGR-XX
Electrical Connection
PIN NO.
LMD8821BEGR-XX
PIN NO.
LMD8821BEGR-XX
1
Cathode Column 5 (Green)
13
Anode Row
2
Cathode Column 5 (Red)
14
Cathode Column 4 (Red)
3
Anode Row 5
15
Cathode Column 4 (Green)
4
Cathode Column 6 (Green)
16
Anode Row
5
Cathode Column 6 (Red )
17
Cathode Column 3 (Red)
6
Anode Row 6
18
Cathode Column 3 (Green)
7
Cathode Column 7 (Green)
19
Anode Row
8
Cathode Column 7 (Red)
20
Cathode Column 2 (Red)
9
Anode Row 7
21
Cathode Column 2 (Green)
10
Cathode Column 8 (Green)
22
Anode Row 1
11
Cathode Column 8 (Red)
23
Cathode Column 1 (Red)
12
Anode Row 8
24
Cathode Column 1 (Green)
4
3
2
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LMD8821/2BEGR-XX
Page 4/9
Electrical Connection
PIN NO.
LMD8822BEGR-XX
PIN NO.
LMD8822BEGR-XX
1
Anode Column 5 (Green)
13
Cathode Row 4
2
Anode Column 5 (Red)
14
Anode Column 4 (Red)
3
Cathode Row 5
15
Anode Column 4 (Green)
4
Anode Column 6 (Green)
16
Cathode Row 3
5
Anode Column 6 (Red )
17
Anode Column 3 (Red)
6
Cathode Row 6
18
Anode Column 3 (Green)
7
Anode Column 7 (Green)
19
Cathode Row 2
8
Anode Column 7 (Red)
20
Anode Column 2 (Red)
9
Cathode Row 7
21
Anode Column 2 (Green)
10
Anode Column 8 (Green)
22
Cathode Row 1
11
Anode Column 8 (Red)
23
Anode Column 1 (Red)
12
Cathode Row 8
24
Anode Column 1 (Green)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LMD8821/2BEGR-XX
Page 5/9
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
E
G
Forward Current Per Chip
IF
30
30
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
120
120
mA
Power Dissipation Per Chip
PD
100
100
mW
Ir
10
μA
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
or
anode
Material Emitted
CHIP
PART NO
GaAsP/GaP Orange
LMD8821BEGR-XX
GaP
Green
GaAsP/GaP Orange
LMD8822BEGR-XX
GaP
Green
Common
Cathode
Common
Anode
Electrical
λP
(nm)
△λ
Vf(v)
(nm)
Iv(mcd)
IV-M
Min. Typ. Max. Min. Typ.
640
45
1.7
2.1
2.6
4.0
6.1
565
30
1.7
2.1
2.6
5.0
7.2
640
45
1.7
2.1
2.6
4.0
6.1
565
30
1.7
2.1
2.6
5.0
7.2
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
2:1
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 6/9
PART NO. LMD8821/2BEGR-XX
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Wavelength
λp
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LMD8821/2BEGR-XX
Page 7/9
Typical Electro-Optical Characteristics Curve
E CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1.0
10
Fig.4 Relative Intensity vs. Temperature
1.2
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
1.1
1.0
0.9
0.8
-20
0
20
40
60
80
100
Relative Intensity@20mA
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
600
650
700
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
550
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
750
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LMD8821/2BEGR-XX
Page 8/9
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 9/9
PART NO. LMD8821/2BEGR-XX
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5 ℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5 ℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11