ASDL-4671 High Performance T-1 (3mm) AlGaAs/GaAs Infrared (940nm) Lamp Data Sheet Description Features ASDL-4671 is a high performance Infrared emitter that utilizes AlGaAs on GaAs LED technology. It is optimized for high efficiency at emission wavelength of 940nm and is designed for application that requires high radiant intensity, low forward voltage at narrow viewing angle. The emitter is encapsulated in T1 (3mm) package and is both mechanically and spectrally matched to ASDL-6620 Infrared phototransistor detector. • • • • • • T-1 Package 940 nm Wavelength Narrow Viewing Angle Low Forward voltage High Efficiency at low currents Good Mechanical and Spectral matching to ASDL-6620 Infrared Phototransistor Detector • Lead Free & ROHS Compliant • Available in Tape & Reel Applications • • • • • • IR Remote Control for Consumer Device IR Remote Control for Industrial Equipment Smoke Detector Photo-interrupters Reflective Applications Infrared Illuminator Security Camera Ordering Information Part Number Lead Form Color Packaging Shipping Option ASDL-4671-C22 ASDL-4671-C31 ASDL-4671-D22 ASDL-4671-D31 Straight Clear Tape & Reel Bulk Tape & Reel Bulk 4000pcs 8000pcs / Carton 4000pcs 8000pcs / Carton Smoke Package Dimensions Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010”) unless otherwise noted 3. Protruded resin under flange is 1.0mm (.039”) max 4. Lead spacing is measured where leads emerge from package 5. Specifications are subject to change without notice Absolute Maximum Ratings at 25°C Parameter Symbol Peak Forward Current Continuous Forward Current Min. Max Unit Reference IFPK 1 A 300 pps IFDC 60 mA Power Dissipation PDISS 90 mW Reverse Voltage VR 5 V Operating Temperature TO -40 85 °C Storage Temperature TS -55 100 °C LED Junction Temperature TJ 110 °C 260 °C for 5 sec Lead Soldering Temperature [ 1.6mm (0.063”) From Body ] Electrical Characteristics at 25°C Parameter Symbol Forward Voltage VF Reverse Voltage VR Thermal Resistance, Junction to Ambient RqJA Min. Typ. Max. Unit Condition 1.2 1.6 V IFDC =20mA V IR =100uA 5 °C/W 350 Optical Characteristics at 25°C Parameter Symbol Min. Typ. Max. Unit Condition Radiant On-Axis Intensity IE 3.91 mW/Sr IFDC =20mA Viewing Angle 2θ1/2 20 deg Peak wavelength λPK 940 nm IFDC = 20mA Spectral Width Δλ 50 nm IFDC = 20mA Optical Rise Time tr 1 ms IFPK=100mA Duty Factor=50% Pulse Width=10us Optical Fall Time tf 1 ms IFPK=100mA Duty Factor=50% Pulse Width=10us Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) 60 Forward Current IF (mA) Relative Radiant Intensity 1.0 0.5 0 840 940 50 40 30 20 10 0 1040 -40 -20 0 Wavelength (nm) Figure 1. SPECTRAL DISTRIBUTION Figure 2. FORWARD CURRENT VS. AMBIENT TEMPERATURE 1.2 Output Power Relative To Value at IF=20mA Forward Current (mA) 50 40 30 20 10 0 20 40 60 80 100 Ambient Temperature Ta ( o C) 0 1.2 1.6 2.0 2.4 1.0 0.8 0.6 0.4 0.2 0 2.8 -20 0 20 Figure 4. RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE 0 Relative Radiant Intensity Output Power Relative To Value at IF=20mA 5.0 4.0 3.0 2.0 1.0 20 40 60 80 80 o Figure 3. FORWARD CURRENT VS. FORWARD VOLTAGE 0 60 Ambient Temperature Ta ( C) Forward Voltage (V) 0 40 100 Data subject to change. Copyright © 2007 Lite-On Technology Corporation. All rights reserved. 20 o 40 o 1.0 0.9 50 o 0.8 60 o 0.7 70 o 80 o 90 o Figure 6. RADIATION DIAGRAM http://optodatabook.liteon.com/databook/databook.aspx o o 0.5 0.3 0.1 For company and product information, please go to our web site: WWW.liteon.com or 10 30 Foward Current (mA) Figure 5. RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT o 0.2 0.4 0.6