HSDL-4270 High-Performance T-1¾ (5mm) AlGaAs Infrared (940nm) Lamp Datasheet Description Features The HSDL-4270 Infrared emitter was designed for applications that require high power and low forward voltage. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for efficiency at emission wavelengths of 940 nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package. • High Power AlGaAs LED Technology 5.0 ± 0.2 • T-1¾ Package • Low Cost • Low Forward Voltage: 1.3V at 20mA Applications • Industrial Infrared Equipments and Applications (Smoke Detectors etc) • Consumer Electronics (Infrared Remote Controller etc) • Infrared spotlight for cameras 1.14 ± 0.2 8.7 ± 0.2 • 940 nm Wavelength • Discrete Interrupters • Infrared source for optical counters and card readers 31.6 min. 5.8 ± 0.2 0.7 max. 2.54 1.0 min. CATHODE FLAT 0.50 ± 0.1 Part Number Lead Form Shipping Option HSDL-4270 Straight Bulk Absolute Maximum Ratings at 25°°C Parameter Symbol Minimum Maximum Unit Reference Peak Forward Current IFPK - 500 mA Figure 3 Duty cycle = 20% Pulse Width = 100us Forward Current IFDC - 100 mA [1] Power Dissipation PDISS - 170 mW Reverse Voltage VR 5 - V Storage Temperature TS -40 100 °C LED Junction Temperature TJ 110 °C 260 for 5 sec °C Lead Soldering Temperature IR=100uA Notes: 1. Derate as shown in Figure 6. Recommended Operating Conditions Parameter Symbol Min Max Unit Operating Temperature TO -40 85 °C Reference Electrical Characteristics at 25°° C Parameter Symbol Min. Typ. Max. Unit Condition Reference Forward Voltage VF - 1.3 1.5 1.4 1.7 V IFDC=20mA IFDC=100mA Figure 2 Figure 3 Forward Voltage Temperature Coefficient ∆V/∆T - -1.4 - mV/°C IFDC=100mA Figure 4 Series Resistance RS - 3.0 - Ohms IFDC=100mA Diode Capacitance CO - 27 - pF Vbias=0V, f=1MHz Thermal Resistance, Junction to Ambient Rθja - 300 - °C/W Optical Characteristics at 25°°C Parameter Symbol Min. Typ. Max. Unit Condition Reference Radiant On-Axis Intensity IE 76 100 - mW/Sr IFDC=100mA Figure 5 Radiant On-Axis Intensity Temperature Coefficient ∆IE/∆T - -0.48 - %/°C IFDC=100mA Viewing Angle 2θ1/2 - 15 - ° Figure 7 Peak Wavelength λpk - 940 - nm Figure 1 Peak wavelength Temperature Coefficient ∆λ/∆T - 0.26 - nm/°C IFDC=100mA Spectral Width ∆λ 45 - nm IFDC=20mA Optical Rise and Fall Time tr/tf 1.3 - µs IFDC=100mA Duty Ratio = 50% Pulse Width=10µs 2 Figure 1 Peak Wavelength Vs Rel Radiant Intensity Forward Current - If(mA) Relative Radiant Intensity V-I Characteristics 100 1.2 1.0 0.8 0.6 0.4 0.2 0 800 10 1 850 900 950 Peak Wavelength - nm 0 1000 Figure 1. Relative Radiant Intensity vs. Wavelength 0.5 1 Forward Voltage - Vf(V) 1.5 Figure 2. DC Forward Current vs. Forward Voltage Peak Forward Voltage Vs Peak Forward Current Forward Voltage Vs Temperature 1.7 Forward Voltage Peak Forward Current-Ifpk(mA) 1000 100 10 1.5 1.3 1.1 0.9 1 0 0.5 1 1.5 2 2.5 0.5 -40 Peak Forward Voltage-Vfpk(V) Forward Current Vs Relative Radiant Intensity 1.0 0.8 0.6 0.4 0.2 0 20 40 60 80 Forward Current in mA 0 20 40 60 Temperature 80 100 120 Maximum Permisible DC forward current vs. ambient temperature 110 100 300 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 TA- Ambient Temperature -˚C Figure 6. DC Forward Current vs. Ambient Temperature Derated Based on TJMAX =110°° C IFDC MAX - Maximum DC Forward Current - mA Relative Radiant Intensity 1.2 0 -20 Figure 4. Forward Voltage vs. Ambient Temperature Figure 3. Peak Forward Current vs. Forward Voltage 100 Figure 5. Relative Radiant Intensity vs. DC Forward Curren 3 at Iled=20mA at Iled=100mA 0.7 120 Relative Radiant Intensity 4270-Angle Vs Relative Radiant Intensity 1.2 1.0 0.8 0.6 0.4 0.2 0 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Angle in degrees Figure 7. Radiant Intensity vs. Angular Displacement For company and product information, please go to our web site: WWW.liteon.com or http://optodatabook.liteon.com/databook/databook.aspx Data subject to change. Copyright © 2007 Lite-On Technology Corporation. All rights reserved.