AVAGO ASDL-4671

ASDL-4671
High Performance T-1 (3mm) AlGaAs/GaAs Infrared (940nm) Lamp
Data Sheet
Description
Features
ASDL-4671 is a high performance Infrared emitter that
utilizes AlGaAs on GaAs LED technology. It is optimized
for high efficiency at emission wavelength of 940nm
and is designed for application that requires high radiant
intensity, low forward voltage at narrow viewing angle.
The emitter is encapsulated in T1 (3mm) package and is
both mechanically and spectrally matched to ASDL-6620
Infrared phototransistor detector.
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T-1 Package
940 nm Wavelength
Narrow Viewing Angle
Low Forward voltage
High Efficiency at low currents
Good Mechanical and Spectral matching to ASDL-6620
Infrared Phototransistor Detector
• Lead Free & ROHS Compliant
• Available in Tape & Reel
Applications
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IR Remote Control for Consumer Device
IR Remote Control for Industrial Equipment
Smoke Detector
Photo-interrupters
Reflective Applications
Infrared Illuminator Security Camera
Ordering Information
Part Number
Lead Form
Color
Packaging
Shipping Option
ASDL-4671-C22
ASDL-4671-C31
ASDL-4671-D22
ASDL-4671-D31
Straight
Clear
Tape & Reel
Bulk
Tape & Reel
Bulk
4000pcs
8000pcs / Carton
4000pcs
8000pcs / Carton
Smoke
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is + 0.25mm (.010”) unless otherwise noted
3. Protruded resin under flange is 1.0mm (.039”) max
4. Lead spacing is measured where leads emerge from package
5. Specifications are subject to change without notice
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Peak Forward Current
Continuous Forward Current
Min.
Max
Unit
Reference
IFPK
1
A
300 pps
IFDC
60
mA
Power Dissipation
PDISS
90
mW
Reverse Voltage
VR
5
V
Operating Temperature
TO
-40
85
°C
Storage Temperature
TS
-55
100
°C
LED Junction Temperature
TJ
110
°C
260 °C for 5 sec
Lead Soldering Temperature
[ 1.6mm (0.063”) From Body ]
Electrical Characteristics at 25°C
Parameter
Symbol
Forward Voltage
VF
Reverse Voltage
VR
Thermal Resistance,
Junction to Ambient
RqJA
Min.
Typ.
Max.
Unit
Condition
1.2
1.6
V
IFDC =20mA
V
IR =100uA
5
°C/W
350
Optical Characteristics at 25°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Radiant On-Axis Intensity
IE
3.91
mW/Sr
IFDC =20mA
Viewing Angle
2θ1/2
20
deg
Peak wavelength
λPK
940
nm
IFDC = 20mA
Spectral Width
Δλ
50
nm
IFDC = 20mA
Optical Rise Time
tr
1
ms
IFPK=100mA
Duty Factor=50%
Pulse Width=10us
Optical Fall Time
tf
1
ms
IFPK=100mA
Duty Factor=50%
Pulse Width=10us
Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated)
60
Forward Current IF (mA)
Relative Radiant Intensity
1.0
0.5
0
840
940
50
40
30
20
10
0
1040
-40 -20 0
Wavelength (nm)
Figure 1. SPECTRAL DISTRIBUTION
Figure 2. FORWARD CURRENT VS. AMBIENT TEMPERATURE
1.2
Output Power Relative To
Value at IF=20mA
Forward Current (mA)
50
40
30
20
10
0
20 40 60 80 100
Ambient Temperature Ta ( o C)
0
1.2
1.6
2.0
2.4
1.0
0.8
0.6
0.4
0.2
0
2.8
-20
0
20
Figure 4. RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE
0
Relative Radiant Intensity
Output Power Relative To
Value at IF=20mA
5.0
4.0
3.0
2.0
1.0
20
40
60
80
80
o
Figure 3. FORWARD CURRENT VS. FORWARD VOLTAGE
0
60
Ambient Temperature Ta ( C)
Forward Voltage (V)
0
40
100
For product information and a complete list of distributors, please go to our web site:
10
o
20
o
30
o
40
o
1.0
0.9
50
o
0.8
60
o
0.7
70
o
80
o
90
o
0.5 0.3 0.1
Foward Current (mA)
Figure 5. RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT
o
Figure 6. RADIATION DIAGRAM
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Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved.
AV02-0028EN - January 22, 2007
0.2 0.4 0.6