LRC L74VHC1G01

LESHAN RADIO COMPANY, LTD.
2–Input NAND Gate with
L74VHC1G01
Open Drain Output
The L74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate
CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including an open drain output which provides the ability to set output switching level.
This allows the L74VHC1G01 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external
resistor and power supply.
The L74VHC1G01 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
• High Speed: t PD = 3.7 ns (Typ) at V CC = 5 V
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A = 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 16
MARKING DIAGRAMS
5
4
1
2
V0d
3
SC–88A / SOT–353/SC–70
DF SUFFIX
Pin 1
d = Date Code
5
Figure 1. Pinout (Top View)
4
V0d
1
2
Figure 2. Logic Symbol
3
TSOP–5/SOT–23/SC–59
DT SUFFIX
Pin 1
d = Date Code
FUNCTION TABLE
Inputs
PIN ASSIGNMENT
1
2
3
4
5
IN B
IN A
GND
OUT Y
V CC
A
L
L
H
H
B
L
H
L
H
Output
Y
Z
Z
Z
L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
1/6
LESHAN RADIO COMPANY, LTD.
L74VHC1G00
MAXIMUM RATINGS
Symbol
V CC
V IN
V OUT
I IK
I OK
I OUT
I CC
PD
θ JA
TL
TJ
T stg
V ESD
Parameter
Value
Unit
DC Supply Voltage
– 0.5 to + 7.0
V
DC Input Voltage
– 0.5 to 7.0
V
DC Output Voltage
– 0.5 to 7.0
V
DC Input Diode Current
–20
mA
DC Output Diode Current
V OUT < GND; V OUT > V CC
+20
mA
DC Output Sink Current
+ 25
mA
DC Supply Current per Supply Pin
+50
mA
Power dissipation in still air
SC–88A, TSOP–5
200
mW
Thermal resistance
SC–88A, TSOP–5
333
°C/W
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
Junction Temperature Under Bias
+ 150
°C
Storage temperature
–65 to +150
°C
ESD Withstand Voltage
Human Body Model (Note 2)
>2000
V
Machine Model (Note 3)
> 200
Charged Device Model (Note 4)
N/A
Latch–Up Performance Above V CC and Below GND at 125°C (Note 5)
± 500
mA
I LATCH–UP
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V CC
DC Supply Voltage
V IN
DC Input Voltage
V OUT
DC Output Voltage
TA
Operating Temperature Range
t r ,t f
Input Rise and Fall Time
Min
2.0
0.0
0.0
– 55
0
0
V CC = 3.3 ± 0.3 V
V CC = 5.0 ± 0.5 V
Max
5.5
5.5
7.0
+ 125
100
20
Unit
V
V
V
°C
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
Time,
Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time,
Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
NORMALIZED FAILURE RATE
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
80
90
100
110
120
130
140
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time
Junction Temperature
2/6
LESHAN RADIO COMPANY, LTD.
L74VHC1G01
DC ELECTRICAL CHARACTERISTICS
V
Symbol
V IH
Parameter
Minimum High–Level
Test Conditions
Input Voltage
V IL
Maximum Low–Level
Input Voltage
V OH
V OL
Min
1.5
Max
Min
1.5
Max
Min
1.5
3.0
4.5
2.1
3.15
2.1
3.15
2.1
3.15
5.5
2.0
3.85
3.85
3.85
V
0.5
0.5
0.9
1.35
0.9
1.35
2.0
1.9
1.9
3.0
4.5
2.9
4.4
3.0
4.0
2.9
4.4
2.9
4.4
V IN = V IH or V IL
I OH = –4 mA
3.0
2.58
2.48
2.34
I OH = –8 mA
V IN = V IH or V IL
4.5
2.0
3.94
3.80
I OL = 50 µA
3.0
4.5
I OH = – 50 µA
Unit
V
0.9
1.35
1.9
Output Voltage
V IN = V IH or V IL
Max
0.5
5.5
2.0
V IN = V IH or V IL
Output Voltage
V IN = V IH or V IL
Typ
T A < 85°C –55°C to 125°C
(V)
2.0
3.0
4.5
Minimum High–Level
Maximum Low–Level
T A = 25°C
CC
1.65
1.65
1.65
V
3.66
0.0
0.1
0.1
0.1
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
V
V IN = V IH or V IL
I OL = 4 mA
3.0
0.36
0.44
0.52
4.5
0 to5.5
0.36
±0.1
0.44
±1.0
0.52
±1.0
µA
5.5
2.0
20
40
µA
0
0.25
2.5
5.0
µA
I IN
Maximum Input
I OL = 8 mA
V IN = 5.5 V or GND
I CC
Leakage Current
Maximum Quiescent
V IN = V CC or GND
Supply Current
I OPD
Maximum Off–state
Leakage Current
V OUT = 5.5 V
AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns
T A = 25°C
Symbol
t PZL
t PLZ
C IN
C PD
Parameter
Maximum Output
Enable Time,
Input A or B to Y
Maximum Output
Disable Time
Typ
T A < 85°C 55°C to 125°C
Max Min Max Min Max Unit
V CC = 3.3 ± 0.3 V C L = 15 pF
R L = R I = 500 Ω C L = 50 pF
5.5
8.0
7.9
11.4
9.5
13.0
11.0
15.5
V CC = 5.0 ± 0.5 V C L = 15 pF
R L = R I = 500 Ω C L = 50 pF
V CC = 3.3 ± 0.3 V C L = 50 pF
R L = R I = 500 Ω
V CC = 5.0 ± 0.5 V C L = 50 pF
R L = R I = 500 Ω
3.7
5.2
8.0
5.5
7.5
11.4
6.5
8.5
13.0
8.0
8.0
15.5
5.2
7.5
8.5
10.0
4
10
10
10
Typical @ 25°C, V CC = 5.0 V
18
pF
Test Conditions
Maximum Input
Capacitance
Power Dissipation Capacitance (Note 6)
Min
ns
ns
pF
6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
load. Average operating current can be obtained by the equation: I CC(OPR) = C PD x V CCx f in + I CC . C PD is used to determine the no–
load dynamic power consumption; P D = C PD x V CC 2 x f in + I CCx V CC .
3/6
LESHAN RADIO COMPANY, LTD.
L74VHC1G01
Figure 5. Switching Waveforms
Figure 4. Output Voltage Mismatch Application
C L = 50 pF equivalent (Includes jig and probe capacitance)
R L = R 1 = 500 Ω or equivalent
R T = Z OUT of pulse generator (typically 50 Ω)
Figure 6. Test Circuit
Figure 8. LED Driver
Figure 7. Complex Boolean Functions
Figure 9. GTL Driver
DEVICE ORDERING INFORMATION
Device Nomenclature
Device Order
Number
Logic
Temp
Circuit
Indicator
Range
Identifier
Technology
Device
Function
Package Type
Package Tape and
(Name/SOT#/
Suffix
Reel Suffix
Common Name)
L74VHC1G01DFT1
L
74
VHC1G
01
DF
T1
L74VHC1G01DFT2
L
74
VHC1G
01
DF
T2
L74VHC1G01DFT4
L
74
VHC1G
01
DF
T4
L74VHC1G01DTT1
L
74
VHC1G
01
DT
T1
L74VHC1G01DTT3
L
74
VHC1G
01
DT
T3
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SOT–23/TSOPS/
SC–59
SOT–23/TSOPS/
SC–59
Tape and
Reel Size
178 mm (7 in)
3000 Unit
178 mm (7 in)
3000 Unit
330 mm (13 in)
10,000 Unit
178 mm (7 in)
3000 Unit
330 mm (13 in)
10,000 Unit
4/6
LESHAN RADIO COMPANY, LTD.
L74VHC1G01
PACKAGE DIMENSIONS
SC70−5/SC−88A/SOT−353
DF SUFFIX
A
G
5
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
4
DIM
A
B
C
D
G
H
J
K
N
S
−B−
S
1
2
3
D 5 PL
0.2 (0.008)
B
M
M
N
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
−−−
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
J
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm inches
5/6
LESHAN RADIO COMPANY, LTD.
L74VHC1G01
PACKAGE DIMENSIONS
SOT23−5/TSOP−5/SC59−5
DT SUFFIX
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. A AND B DIMENSIONS DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
S
5
4
1
2
3
B
L
G
DIM
A
B
C
D
G
H
J
K
L
M
S
A
J
C
0.05 (0.002)
H
M
K
MILLIMETERS
MIN
MAX
2.90
3.10
1.30
1.70
0.90
1.10
0.25
0.50
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.55
0_
10 _
2.50
3.00
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0_
10 _
0.0985 0.1181
SOLDERING FOOTPRINT*
0.95
0.037
1.9
0.074
2.4
0.094
1.0
0.039
0.7
0.028
SCALE 10:1
mm inches
6/6