2-Input AND Gate MC74VHC1G08 The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1G08 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G08 to be used to interface 5 V circuits to 3 V circuits. • High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V • Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C • Power Down Protection Provided on Inputs • Balanced Propagation Delays • Pin and Function Compatible with Other Standard Logic Families • Chip Complexity: FETs = 62; Equivalent Gates = 15 MARKING DIAGRAMS 5 4 1 2 V2d 3 SC–88A / SOT–353/SC–70 DF SUFFIX CASE 419A Pin 1 d = Date Code 5 Figure 1. Pinout (Top View) 4 V2d 1 2 Figure 2. Logic Symbol 3 TSOP–5/SOT–23/SC–59 DT SUFFIX CASE 483 Pin 1 d = Date Code FUNCTION TABLE Inputs PIN ASSIGNMENT 1 2 3 4 5 IN B IN A GND OUT Y V CC A L L H H B L H L H Output Y L L L H ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. VH8–1/4 MC74VHC1G08 MAXIMUM RATINGS Symbol V CC V IN V OUT Parameter Value Unit – 0.5 to + 7.0 V – 0.5 to 7.0 V V CC=0 – 0.5 to 7.0 V High or Low State –0.5 to V cc + 0.5 I IK Input Diode Current –20 mA I OK Output Diode Current V OUT < GND; V OUT > V CC +20 mA I OUT DC Output Current, per Pin + 25 mA I CC DC Supply Current, V CC and GND +50 mA PD Power dissipation in still air SC–88A, TSOP–5 200 mW θ JA Thermal resistance SC–88A, TSOP–5 333 °C/W TL Lead Temperature, 1 mm from Case for 10 s 260 °C TJ Junction Temperature Under Bias + 150 °C T stg Storage temperature –65 to +150 °C V ESD ESD Withstand Voltage Human Body Model (Note 2) >2000 V Machine Model (Note 3) > 200 Charged Device Model (Note 4) N/A Latch–Up Performance Above V CC and Below GND at 125°C (Note 5) ± 500 mA I LATCH–UP 1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 2. Tested to EIA/JESD22–A114–A 3. Tested to EIA/JESD22–A115–A 4. Tested to JESD22–C101–A 5. Tested to EIA/JESD78 DC Supply Voltage DC Input Voltage DC Output Voltage RECOMMENDED OPERATING CONDITIONS Symbol Parameter V CC DC Supply Voltage V IN DC Input Voltage V OUT DC Output Voltage TA Operating Temperature Range t r ,t f Input Rise and Fall Time Min 2.0 0.0 0.0 – 55 0 0 V CC = 3.3 ± 0.3 V V CC = 5.0 ± 0.5 V Max 5.5 5.5 7.0 + 125 100 20 Unit V V V °C ns/V DEVICE JUNCTION TEMPERATURE VERSUS Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0 NORMALIZED FAILURE RATE TIME TO 0.1% BOND FAILURES Junction Temperature °C 80 90 100 110 120 130 140 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature VH8–2/4 MC74VHC1G08 DC ELECTRICAL CHARACTERISTICS V Symbol V IH Parameter Minimum High–Level Test Conditions Input Voltage V IL Maximum Low–Level Input Voltage V OH V OL Min 1.5 Max Min 1.5 Max Min 1.5 3.0 4.5 2.1 3.15 2.1 3.15 2.1 3.15 5.5 2.0 3.85 3.85 3.85 V 0.5 0.5 0.9 1.35 0.9 1.35 2.0 1.9 1.9 3.0 4.5 2.9 4.4 3.0 4.0 2.9 4.4 2.9 4.4 V IN = V IH or V IL I OH = –4 mA 3.0 2.58 2.48 2.34 I OH = –8 mA V IN = V IH or V IL 4.5 2.0 3.94 3.80 I OL = 50 µA 3.0 4.5 I OH = – 50 µA Unit V 0.9 1.35 1.9 Output Voltage V IN = V IH or V IL Max 0.5 5.5 2.0 V IN = V IH or V IL Output Voltage V IN = V IH or V IL Typ T A < 85°C –55°C<TA<125°C (V) 2.0 3.0 4.5 Minimum High–Level Maximum Low–Level T A = 25°C CC 1.65 1.65 1.65 V 3.66 0.0 0.1 0.1 0.1 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 V V IN = V IH or V IL I OL = 4 mA 3.0 0.36 0.44 0.52 4.5 0 to5.5 0.36 ±0.1 0.44 ±1.0 0.52 ±1.0 µA 5.5 2.0 20 40 µA I IN Maximum Input I OL = 8 mA V IN = 5.5 V or GND I CC Leakage Current Maximum Quiescent V IN = V CC or GND Supply Current AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns Symbol t PLH , t PHL Parameter Maximum Propogation Delay, Test Conditions Min T A < 85°C –55°C to 125°C T A = 25°C Typ Max Min Max Min Max Unit V CC = 3.3± 0.3 V C L = 15 pF C L = 50 pF 4.1 5.9 8.8 12.3 10.5 14.0 12.5 16.5 V CC = 5.0± 0.5 V C L = 15 pF 3.5 5.9 7.0 9.0 C L = 50 pF 4.2 5.5 7.9 10 9.0 10 11.0 10 ns Input A or B to Y C IN Maximum Input pF Capacitance Typical @ 25°C, V CC = 5.0 V C PD Power Dissipation Capacitance (Note 6) 11 pF 6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I CC(OPR) = C PD • V CC • f in + I CC . C PD is used to determine the no– load dynamic power consumption; P D = C PD • V CC 2 • f in + I CC • V CC . VH8–3/4 MC74VHC1G08 *Includes all probe and jig capacitance Figure 5. Test Circuit Figure 4. Switching Waveforms DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number Package Type Logic Temp Circuit Indicator Range Technology Identifier MC74VHC1G08DFT1 MC 74 VHC1G 08 DF T1 MC74VHC1G08DFT2 MC 74 VHC1G 08 DF T2 MC74VHC1G08DFT4 MC 74 VHC1G 08 DF T4 MC74VHC1G08DTT1 MC 74 VHC1G 08 DT T1 MC74VHC1G08DTT3 MC 74 VHC1G 08 DT T3 (Name/SOT#/ Reel Suffix Common Name) Device Package Tape and Function Suffix SC–70/SC–88A/ SOT–353 SC–70/SC–88A/ SOT–353 SC–70/SC–88A/ SOT–353 SOT–23/TSOPS/ SC–59 SOT–23/TSOPS/ SC–59 Tape and Reel Size 178 mm (7 in) 3000 Unit 178 mm (7 in) 3000 Unit 330 mm (13 in) 10,000 Unit 178 mm (7 in) 3000 Unit 330 mm (13 in) 10,000 Unit VH8–4/4