LRC LBAS40

LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
LBAS40XLT1G
Features
3
Low forward current
Guard ring protected
Low diode capacitance.
1
2
APPLICATIONS
SOT- 23
Ultra high-speed switching
Voltage clamping
Protection circuits.
1
Anode
Blocking diodes.
3
Cathode
BAS40 single diode.
DESCRIPTION
Planar Schottky barrier diodes with an integrated guard ring for
stress protection.
We declare that the material of product
compliance with RoHS requirements.
ORDERING INFORMATION
Device
Marking
Shipping
LBAS40LT1G
B1
3000 Tape & Reel
LBAS40LT3G
B1
10000 Tape & Reel
LBAS40-04LT1G
CB
3000 Tape & Reel
LBAS40-04LT3G
CB
10000 Tape & Reel
LBAS40-05LT1G
455
3000 Tape & Reel
LBAS40-05LT3G
455
10000 Tape & Reel
LBAS40-06LT1G
L2
L2
3000 Tape & Reel
LBAS40-06LT3G
10000 Tape & Reel
3
Cathode/Anode
1
Anode
2
Cathode
BAS40-04 double diode.
3
Cathode
1
Anode
2
Anode
BAS40-05 double diode.
3
Anode
1
Cathode
2
Cathode
BAS40-06 double diode.
1/4
LESHAN RADIO COMPANY, LTD.
LBAS40XLT1G
MAXIMUM RATINGS (TA = 25°C)
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive Peak forward surge current
Non-repetitive peak forward current
Storage temperature
Junction temperature
Operating ambient temperature
Symbol
VR
IF
IFSM
IFSM
Tstg
Tj
Tamb
Min.
-65
-65
Max.
40
120
120
200
+150
150
+150
Unit
V
mA
mA
mA
°C
°C
°C
Conditions
tp<1s;δ<0.5
tp<10ms
DEVICE MARKING
LBAS40LT1G=B1 LBAS40-04LT1G=CB LBAS40-05LT1G=45 LBAS40-06LT1G=L2
ELECTRICAL CHARACTERISTICS(TA = 25°C)
Parameter
Forward voltage(Fig.1)
Symbol
VF
Reverse current(Fig.2 ;note1)
IR
Diode capacitance(Fig.4)
Cd
Max.
400
560
1
1
10
5
Unit
mV
mv
v
µΑ
µA
pF
Conditions
IF=1mA
IF=10mA
IF=40mA
VR=30V
VR=40V
f=1MHz;VR=0
Note:
1. Pulse test:tp=300µs;δ=0.02.
THERMAL CHARACTERISTICS
PARAMETER
Thermal resistance from junction to ambient
SYMBOL
VALUE
UNIT
CONDITIONS
Rth j-a
500
k/w
note1
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
2/4
LESHAN RADIO COMPANY, LTD.
LBAS40XLT1G
Electrical characteristic curves(TA = 25°C)
103
Tamb=85OC
FORWARD VOLTAGE: I (µA)
R
FORWARD VOLTAGE: I (mA)
F
102
O
10 Tamb=150 C
Tamb=25OC
1
Tamb=-40OC
10-1
Tamb=150OC
2
10
10
Tamb=85OC
1
10-
10-2 0
0.2
0.4
0.6
0.8
1.0
1
10-2
Tamb=25OC
0
20
30
40
Fig.2 Reverse current as a function of
reverse voltage; typical values.
Fig.1 Forward current as a function of
forward voltage; typical values.
5
103
4
FORWARD VOLTAGE: Cd(pF)
FORWARD VOLTAGE: rdiff(Ω)
10
FORWARD VOLTAGE: V (V)
R
FORWARD VOLTAGE: V (V)
F
102
10
1
-1
10
1
2
10
FORWARD VOLTAGE: I (mA)
F
10
f=10KHz
Fig.3 Differential forward resistance as a function
of forward current;typical values.
3
2
1
0
0
10
20
FORWARD VOLTAGE: V (V)
R
30
40
O
f=1MHz Tamb=25 C
Fig.4 Diode capacitance as a function of reverse
voltage;typical values.
3/4
LESHAN RADIO COMPANY, LTD.
LBAS40XLT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
4/4