LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage LBAS70LT1G Series Guard ring protected Low diode capacitance. 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection.Single diodes and double diodes with different pinning are available. We declare that the material of product compliance with RoHS requirements. 1 2 SOT- 23 1 Anode 3 Cathode BAS70 single diode. ORDERING INFORMATION Device Marking Shipping LBAS70LT1G BE 3000 Tape & Reel LBAS70LT3G BE 10000 Tape & Reel LBAS70-04LT1G CG 3000 Tape & Reel LBAS70-04LT3G CG 10000 Tape & Reel LBAS70-05LT1G EH EH 3000 Tape & Reel LBAS70-05LT3G EH 10000 Tape & Reel LBAS70-06LT1G GK GK 3000 Tape & Reel LBAS70-06LT3G 3 Cathode/Anode 1 Anode 2 Cathode BAS70-04 double diode. 3 Cathode 10000 Tape & Reel 1 Anode 2 Anode BAS70-05 double diode. 3 Anode 1 Cathode 2 Cathode BAS70-06 double diode. Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LBAS70LT1G Series MAXIMUM RATINGS (TA = 25°C) Parameter Continuous reverse voltage Continuous forward current Repetitive Peak forward surge current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Symbol VR IF IFSM IFSM Tstg Tj Tamb Min. -65 -65 Max. 70 70 70 100 +150 150 +150 Unit V mA mA mA °C °C °C Conditions tp<1s;δ<0.5 tp<10ms DEVICE MARKING LBAS70LT1G=BE LBAS70-04LT1G=CG LBAS70-05LT1G=EH LBAS70-06LT1G=GK ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Forward voltage(Fig.1) Symbol VF Reverse current(Fig.2 ;note1) Charge carrier life time (krakauer method) Diode capacitance(Fig.4) Note: Max. 410 750 1 100 10 Unit mV mv v nΑ µA Conditions IF=1mA IF=10mA IF=15mA VR=50V VR=70V τ 100 ps IF=5mA Cd 2 pF f=1MHz;VR=0 IR 1. Pulse test:tp=300µs;δ=0.02. THERMAL CHARACTERISTICS PARAMETER Thermal resistance from junction to ambient SYMBOL VALUE UNIT CONDITIONS Rth j-a 500 k/w note1 Note 1. Refer to SOT23 or SOT143B standard mounting conditions. Rev.O 2/4 LESHAN RADIO COMPANY, LTD. LBAS70LT1G Series Electrical characteristic curves(TA = 25°C) 2 10 IR , REVERSE CURRENT (μA) IF, FORWARD CURRENT (mA) 10 10 1 Tamb=85OC O 1 10- Tamb=125 C Tamb=25OC 10-2 0 0.2 0.4 0.6 0.8 1.0 Tamb=125OC 10 1 Tamb=85OC 10- 1 10 Tamb=-40OC 2 -2 Tamb=25OC 10-3 0 FORWARD VOLTAGE: V (V) F 60 80 Fig.2 Reverse current as a function of reverse voltage; typical values. 2 C T, CAPACITANCE (pF) 103 Differential forward resistance rdif (Ω) 40 FORWARD VOLTAGE: V (V) R Fig.1 Forward current as a function of forward voltage; typical values. 2 10 10 1 -1 10 20 1 2 10 FORWARD VOLTAGE: I (mA) F 10 f=10KHz Fig.3 Differential forward resistance as a function of forward current;typical values. 1.5 1 0.5 0 0 20 40 FORWARD VOLTAGE: V (V) R 60 80 O f=1MHz Tamb=25 C Fig.4 Diode capacitance as a function of reverse voltage;typical values. Rev.O 3/4 LESHAN RADIO COMPANY, LTD. LBAS70LT1G Series SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 4/4