LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected LBAS40LT1G Series S-LBAS40LT1G Series Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 3 1 2 APPLICATIONS SOT- 23 Ultra high-speed switching Voltage clamping Protection circuits. 1 Anode Blocking diodes. 3 Cathode BAS40 single diode. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device LBAS40LT1G S-LBAS40LT1G LBAS40LT3G S-LBAS40LT3G LBAS40-04LT1G S-LBAS40-04LT1G LBAS40-04LT3G S-LBAS40-04LT3G LBAS40-05LT1G S-LBAS40-05LT1G LBAS40-05LT3G S-LBAS40-05LT3G LBAS40-06LT1G S-LBAS40-06LT1G LBAS40-06LT3G S-LBAS40-06LT3G Marking Shipping B1 3000 Tape & Reel B1 10000 Tape & Reel CB 3000 Tape & Reel CB 10000 Tape & Reel 455 3000 Tape & Reel 3 Cathode/Anode 1 Anode 2 Cathode BAS40-04 double diode. 3 Cathode 1 Anode 2 Anode BAS40-05 double diode. 455 10000 Tape & Reel L2 3000 Tape & Reel L2 10000 Tape & Reel 3 Anode 1 Cathode 2 Cathode BAS40-06 double diode. Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LBAS40LT1G Series , S-LBAS40LT1G Series MAXIMUM RATINGS (TA = 25°C) Parameter Continuous reverse voltage Continuous forward current Repetitive Peak forward surge current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Symbol VR IF IFSM IFSM Tstg Tj Tamb Min. -65 -65 Max. 40 120 120 200 +150 150 +150 Unit V mA mA mA °C °C °C Conditions tp<1s;δ<0.5 tp<10ms DEVICE MARKING LBAS40LT1G=B1 LBAS40-04LT1G=CB LBAS40-05LT1G=45 LBAS40-06LT1G=L2 ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Forward voltage(Fig.1) Symbol VF Reverse current(Fig.2 ;note1) IR Diode capacitance(Fig.4) Cd Max. 400 560 1 1 10 5 Unit mV mv v µΑ µA pF Conditions IF=1mA IF=10mA IF=40mA VR=30V VR=40V f=1MHz;VR=0 Note: 1. Pulse test:tp=300µs;δ=0.02. THERMAL CHARACTERISTICS PARAMETER Thermal resistance from junction to ambient SYMBOL VALUE UNIT CONDITIONS Rth j-a 500 k/w note1 Note 1. Refer to SOT23 or SOT143B standard mounting conditions. Rev.O 2/4 LESHAN RADIO COMPANY, LTD. LBAS40LT1G Series , S-LBAS40LT1G Series Electrical characteristic curves(TA = 25°C) 103 Tamb=85OC FORWARD VOLTAGE: I (µA) R FORWARD VOLTAGE: I (mA) F 102 O 10 Tamb=150 C Tamb=25OC 1 Tamb=-40OC 10-1 Tamb=150OC 2 10 10 Tamb=85OC 1 10- 10-2 0 0.2 0.4 0.6 0.8 1.0 1 10-2 Tamb=25OC 0 20 30 40 Fig.2 Reverse current as a function of reverse voltage; typical values. Fig.1 Forward current as a function of forward voltage; typical values. 5 103 4 FORWARD VOLTAGE: Cd(pF) FORWARD VOLTAGE: rdiff(Ω) 10 FORWARD VOLTAGE: V (V) R FORWARD VOLTAGE: V (V) F 102 10 1 -1 10 1 2 10 FORWARD VOLTAGE: I (mA) F 10 f=10KHz Fig.3 Differential forward resistance as a function of forward current;typical values. 3 2 1 0 0 10 20 FORWARD VOLTAGE: V (V) R 30 40 O f=1MHz Tamb=25 C Fig.4 Diode capacitance as a function of reverse voltage;typical values. Rev.O 3/4 LESHAN RADIO COMPANY, LTD. LBAS40LT1G Series , S-LBAS40LT1G Series SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 4/4