LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G Features • We declare that the material of product compliance with RoHS requirements. 3 1 DEVICE MARKING 2 LBAW56WT1G = A1 CASE 419–04, STYLE 4 SOT–323 (SC–70) MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltag Forward Current Peak Forward Surge Current Symbol Max Unit VR 70 200 500 Vdc mAdc mAdc IF IFM(surge) CATHODE 2 CATHODE 1 3 ANODE Ordering Information Device Marking Shipping LBAW56WT1G A1 3000/Tape&Reel LBAW56WT3G A1 10000/Tape&Reel THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 Unit mW RθJA PD 1.6 0.625 300 mW/°C °C/W mW RθJA TJ, Tstg 2.4 417 –55 to +150 mW/°C °C/W °C Symbol Min Max Unit V(BR) 70 — Vdc — — — — 30 2.5 50 2.0 — — — — — 715 855 1000 1250 6.0 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 60 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 Ω, IR(REC) = 1.0 mAdc) (Figure 1) 1. FR–5 = 1.0 × 0.75 × 0.062 in. 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina. µAdc IR CD VF trr pF mVdc ns 1/3 LESHAN RADIO COMPANY, LTD. LBAW56WT1G +10 V 2.0 k 820 Ω 100 µH IF 0.1 µF tp tr 0.1µF IF t t 10% 90% D.U.T. 50 Ω INPUT SAMPLING OSCILLOSCOPE 50 Ω OUTPUT PULSE GENERATOR t rr i R(REC) = 1.0 mA IR V R INPUT SIGNAL OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit 10 IR , REVERSE CURRENT (µA) 10 1.0 0.1 1.0 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 VF , FORWARD VOLTAGE (VOLTS) VR , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 50 1.75 CD DIODE CAPACITANCE (pF) IF , FORWARD CURRENT (mA) 100 1.5 1.25 1.0 0.75 0 2 4 6 8 VR , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance 2/3 LESHAN RADIO COMPANY, LTD. LBAW56WT1G SC−70 (SOT−323) D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 2 b e A 0.05 (0.002) c A2 DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 SOLDERING FOOTPRINT* 0.65 0.025 0.016 0.010 0.087 0.053 0.055 0.095 1 XX M 1.9 0.075 = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 0.9 0.035 SCALE 10:1 0.079 MAX 0.040 0.004 XXM 0.65 0.025 0.7 0.028 0.012 0.004 0.071 0.045 0.047 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 GENERIC MARKING DIAGRAM L A1 MIN 0.032 0.000 mm inches 3/3