LMBD2836LT1G

LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diodes
FEATURE
z We declare that the material of product
compliance with RoHS requirements.
LMBD2835LT1G
S-LMBD2835LT1G
LMBD2836LT1G
S-LMBD2836LT1G
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking
Shipping
A3X
3000/Tape&Reel
A3X
10000/Tape&Reel
A2X
3000/Tape&Reel
A2X
10000/Tape&Reel
LMBD2835LT1G
S-LMBD2835LT1G
LMBD2835LT3G
S-LMBD2835LT3G
LMBD2836LT1G
S-LMBD2836LT1G
3
1
LMBD2836LT3G
S-LMBD2836LT3G
2
MAXIMUM RATINGS
Rating
Peak Reverse Voltage
D.C Reverse Voltage
SOT– 23
LMBD2835LT1G
LMBD2836LT1G
Symbol
V RM
VR
Peak Forward Current
I FM
Average Rectified Current
IO
Value
75
35
75
450
300
150
Unit
Vdc
Vdc
CATHODE
1
ANODE
3
mAdc
2
mAdc
CATHODE
100
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board (1)
T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
Unit
mW
R θ JA
PD
1.8
556
300
mW/°C
°C/W
mW
R θ JA
T J , T stg
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
LMBD2835LT1G = A3X;LMBD2836LT1G=A2X
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)( EACH DIODE )
Characteristic
Symbol
Min
Max
Unit
V (BR)
35
—
Vdc
75
—
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I R = 100 µAdc) LMBD2835LT1G
LMBD2836LT1G
Reverse Voltage Leakage Current
(V R = 30 Vdc)
LMBD2835LT1G
IR
—
100
(V R = 50 Vdc)
LMBD2836LT1G
—
100
CT
—
4.0
pF
VF
—
1.0
Vdc
t rr
—
—
—
1.0
1.2
4.0
ns
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 100 mAdc)
Reverse Recovery Time(I F = I R = 10 mAdc, I R(REC)= 1.0mAdc) (Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
nAdc
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LMBD2835LT1G, S-LMBD2835LT1G
LMBD2836LT1G, S-LMBD2836LT1G
+10 V
2.0 k
820 Ω
100 µH
IF
0.1 µF
tp
tr
0.1µF
IF
t
t rr
10%
t
90%
DUT
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
50 Ω OUTPUT
PULSE
GENERATOR
i
IR
INPUT SIGNAL
V
R(REC)
= 1.0 mA
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i R(REC) = 1.0 mA)
R
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.
Notes: 3. t p » t rr
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH CATHODE
10
I R, REVERSE CURRENT ( µA)
T A = 85°C
T A= –40°C
10
T A = 25°C
1.0
T A =150°C
T A =125°C
1.0
T A =85°C
0.1
T A =55°C
0.01
T A =25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
0
1.2
10
20
30
40
V F , FORWARD VOLTAGE (VOLTS)
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
50
1.75
C D , DIODE CAPACITANCE (pF)
I F , FORWARD CURRENT (mA)
100
1.50
1.25
1.00
0.75
0
2.0
4.0
6.0
8.0
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LMBD2835LT1G, S-LMBD2835LT1G
LMBD2836LT1G, S-LMBD2836LT1G
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3